Related papers: Monolithic Pixel Sensors in Deep-Submicron SOI Tec…

A low noise and wide dynamic range event driven detector for the detection of X-Ray energy is realized using 0.2 [um] Silicon on insulator (SOI) technology. Pixel circuits are divided into two parts; signal sensing circuit and event…

In this paper, we introduce a new approach to fabricate under the Silicon on Insulator (SOI) platform a 1x2 power splitter and scale it to 1xN system device from the proposed model. The current strategy of design is based on the well-known…

Traditional silicon-on-insulator (SOI) platform based on-chip photonic interconnects have limited energy-bandwidth scalability due to the optical non-linearity induced power constraints of the constituent photonic devices. In this paper, we…

The significant optical and size benefits of using a curved focal surface for imaging systems have been well studied yet never brought to market for lack of a high-quality, mass-producible, curved image sensor. In this work we demonstrate…

For large scale applications, hybrid pixel detectors, in which sensor and read-out IC are separate entities, constitute the state of the art in pixel detector technology to date. They have been developed and start to be used as tracking…

Monolithic active pixel sensors produced in High Voltage CMOS (HV-CMOS) technology are being considered for High Energy Physics applications due to the ease of production and the reduced costs. Such technology is especially appealing when…

We fabricated a readout ASIC with the fully depleted silicon-on-insulator (FD-SOI) technology for the pair-monitor. The pair-monitor is a silicon pixel device that measures the beam profile of the international linear collider. It utilizes…

Silicon pixel sensors manufactured using commercial CMOS processes are promising instruments for high-energy particle physics experiments due to their high yield and proven radiation hardness. As one of the essential factors for the…

Reliable integration of photonic integrated circuits (PICs) into quantum sensors has the potential to drastically reduce sensor size, ease manufacturing scalability, and improve performance in applications where the sensor is subject to…

During LHC Long Shutdown 3, the ALICE experiment will replace the three innermost layers of its Inner Tracking System (ITS2) with a new vertex detector, the ITS3. This new detector will be assembled using wafer-scale, stitched Monolithic…

X-ray SOI pixel sensors, "XRPIX", are being developed for the next-generation X-ray astronomical satellite, "FORCE". The XRPIX are fabricated with the SOI technology, which makes it possible to integrate a high-resistivity Si sensor and a…

This study proposes a simulation-based design for a Silicon-On-Insulator (SOI) ring resonator with a Figure of Merit (FOM) of 56.15 and a high sensitivity of up to 730 nm/RIU. The Finite-Difference Time-Domain (FDTD) technique was used to…

Quantum sensing and imaging of magnetic fields has attracted broad interests due to its potential for high sensitivity and spatial resolution. Common systems used for quantum sensing require either optical excitation (e.g., nitrogen-vacancy…

Many years of research and development of High Voltage Monolithic Active Pixel Sensors (HVMAPS) have culminated in the final design for the Mu3e pixel sensor. MuPix10 is a fully monolithic sensor with an active pixel matrix size of…

DEPleted Field Effect Transistor (DEPFET) active pixel detectors combine a first amplification stage with a fully depleted sensor in one single device, resulting in a very good signal-to-noise ratio even for thin sensors. DEPFET pixels are…

Conventional image sensors are only responsive to the intensity variation of the incoming light wave. By encoding the wavefront information into the balanced detection scheme, we demonstrate an image sensor pixel design that is capable to…

A fundamental road block for all-optical information processing is the difficulty in realizing a silicon optical transistor with the ability to provide optical gain, input output isolation and buffer action. In this work, we demonstrate an…

Monolithic Active Pixel Sensors (MAPS) achieved widespread use in several scientific applications, thanks to their properties, such as low material budget and high granularity. The ARCADIA INFN project developed a Fully-Depleted MAPS…

Semiconductor pixel detectors offer features for the detection of radiation which are interesting for particle physics detectors as well as for imaging e.g. in biomedical applications (radiography, autoradiography, protein crystallography)…

In recent years, scientific Complementary Metal Oxide Semiconductor (sCMOS) devices have been increasingly applied in X-ray detection, thanks to their attributes such as high frame rate, low dark current, high radiation tolerance and low…