Related papers: Monolithic Pixel Sensors in Deep-Submicron SOI Tec…
A monolithic silicon pixel prototype produced for the MONOLITH ERC Advanced project was irradiated with 70 MeV protons up to a fluence of 1 x 10^16 1 MeV n_eq/cm^2. The ASIC contains a matrix of hexagonal pixels with 100 {\mu}m pitch,…
Recent advances in three-dimensional laser writing have enabled direct nanostructuring deep within silicon, unlocking a volumetric design space previously inaccessible to surface-bound nanophotonic devices. Here, we introduce subwavelength…
We present the first demonstration of all-optical squeezing in an on-chip monolithically integrated CMOS-compatible platform. Our device consists of a low loss silicon nitride microring optical parametric oscillator (OPO) with a gigahertz…
This article is present the effected oxide capacitor in CMOS structure of integrated circuit level 5 micrometer technology. It has designed and basic structure of MOS diode. It establish with aluminum metallization layer by sputtering…
We design a resistive heater optimized for efficient and low-loss optical phase modulation in a silicon-on-insulator (SOI) waveguide and characterize the fabricated devices. Modulation is achieved by flowing current perpendicular to a new…
An array of DEPFET pixels is one of several concepts to implement an active pixel sensor. Similar to PNCCD and SDD detectors, the typically 0.45 mm thick silicon sensor is fully depleted by the principle of sideward depletion. They have…
We report electronic transport on n-type silicon Single Electron Transistors (SETs) fabricated in Complementary Metal Oxide Semiconductor (CMOS) technology. The n-MOSSETs are built within a pre-industrial Fully Depleted Silicon On Insulator…
We present a method to fabricate tensile-strained germanium-on-insulator (GOI) substrates using heteroepitaxy and layer transfer techniques. The motivation is to obtain a high-quality wafer-scale GOI platform suitable for silicon-compatible…
For the Inner Tracking System 3 (ITS3) upgrade, the ALICE experiment at CERN requires monolithic active pixel sensors of dimensions up to 97~mm$\,\times\,$266~mm, occupying a large fraction of a 300 mm wafer. To manufacture such a…
Silicon detectors have gained in popularity since silicon became a widely used micro/nanoelectronic semiconductor material. Silicon detectors are used in particle physics as well as imaging for pixel based detecting systems. Over the past…
High-voltage CMOS (HV-CMOS) pixel technology is being considered for future Higgs factory experiments. The ATLASPix3.1 chip, with a pitch of 50$\mu m$ x 150$\mu m$, fabricated using TSI 180nm HV-CMOS technology, is a full reticle-size…
The two innermost layers of the ALICE inner tracking system are instrumented with silicon pixel detectors. Single chip assembly prototypes of the ALICE pixels have been tested in high energy particle beams at the CERN SPS. Detection…
Managing insertion losses, polarizations and device footprint is crucial in developing large-scale photonic integrated circuits (PICs). This paper presents a solution to these critical challenges by designing a semiconductor optical…
The bottleneck in achieving fully integrated silicon photonics lies in silicon-based light-emitting devices that are compatible with standard CMOS technology. Dislocation loops by implanting boron into silicon and annealing represents an…
We have developed a neutron imaging sensor based on an INTPIX4-SOI pixelated silicon device. Neutron irradiation tests are performed at several neutron facilities to investigate sensor's responses for neutrons. Detection efficiency is…
Pixel detectors for precise particle tracking in high energy physics have been developed to a level of maturity during the past decade. Three of the LHC detectors will use vertex detectors close to the interaction point based on the hybrid…
Samples of the monolithic silicon pixel ASIC prototype produced in 2022 within the framework of the Horizon 2020 MONOLITH ERC Advanced project were irradiated with 70 MeV protons up to a fluence of 1 x 1016 neq/cm2, and then tested using a…
Photonic integrated circuits that exploit nonlinear optics in order to generate and process signals all-optically have achieved performance far superior to that possible electronically - particularly with respect to speed. Although…
MIMOSIS is a CMOS Monolithic Active Pixel Sensor developed to equip the Micro Vertex Detector of the Compressed Baryonic Matter (CBM) experiment at FAIR/GSI. The sensor will combine an excellent spatial precision of $5~\mu m$ with a time…
We describe critical processing issues in our development of single atom devices for solid-state quantum information processing. Integration of single 31P atoms with control gates and single electron transistor (SET) readout structures is…