Related papers: Very simple FET amplifier with a voltage noise flo…
We characterise a small footprint travelling-wave parametric amplifier (TWPA). The TWPA is built with magnetically flux-tunable superconducting nonlinear asymmetric inductive elements (SNAILs) and parallel-plate capacitors. It implements…
In this work, we present a performance analysis of Field Effect Transistors based on recently fabricated 100% hydrogenated graphene (the so-called graphane) and theoretically predicted semi-hydrogenated graphene (i.e. graphone). The…
Phase sensitive amplifiers (PSA), contrary to usual phase insensitive amplifiers (PIA), are in principle capable to achieve noiseless amplification, i.e. exhibit a quantum-limited noise figure (NF) of 0 dB. When implemented using four-wave…
We have constructed a Fourier-transform spectrometer (FTS) operating between 50 and 330 GHz with minimum volume (355 x260 x64 mm) and weight (13 lbs) while maximizing optical throughput (100 $\mathrm{mm}^2$ sr) and optimizing the spectral…
Two-dimensional (2D) materials are particularly attractive to build the channel of next-generation field-effect transistors (FETs) with gate lengths below 10-15 nm. Because the 2D technology has not yet reached the same level of maturity as…
We describe a chip-scale, telecommunications-band frequency conversion interface designed for low-noise operation at wavelengths desirable for common single photon emitters. Four-wave mixing Bragg scattering in silicon nitride waveguides is…
Lasers are the workhorse of quantum engineering in the atomic-molecular-optic community. However, phase noise of the laser, which can be especially large in popular semiconductor-based lasers, can limit fidelity of operation. Here, we…
We experimentally show that the Inelastic Cooper-Pair Tunneling Amplifier (ICTA), implementing a DC-powered parametric amplification scheme, can achieve gain and noise performance similar to that of Josephson parametric amplifiers. Using…
Theoretical results are presented which show that noiseless phase quadrature amplification is possible, and limited experimentally only by the efficiency of the phase detection system. Experimental results obtained using a Nd:YAG laser show…
Low-noise amplifiers are of great importance in the field of quantum technologies. We study a thermally driven parametric amplifier based on a superconductor-insulator-graphene-insulator-superconductor (SIGIS) junction coupled to a…
Fault-tolerant spin-based quantum computers will require fast and accurate qubit readout. This can be achieved using radio-frequency reflectometry given sufficient sensitivity to the change in quantum capacitance associated with the qubit…
A dual mode device behaving either as a field-effect transistor or a single electron transistor (SET) has been fabricated using silicon-on-insulator metal oxide semiconductor technology. Depending on the back gate polarisation, an electron…
We fabricate and characterize a radio-frequency semiconductor point-contact electrometer (RF-PC) analogous to radio-frequency single-electron transistors [RF-SETs, see Science {\bf 280}, 1238 (1998)]. The point contact is formed by surface…
A field-effect transistor that employs a perovskite-type SrTiO3 single crystal as the semiconducting channel is revealed to function as n-type accumulation-mode device with characteristics similar to that of organic FET's. The device was…
In this paper, a two-stage ultra-low-power operational amplifier is designed, and a comparative analysis of the proposed subthreshold complementary amplifier is presented between 180nm, 90nm, and 45nm CMOS technology. The proposed…
Low-frequency resonances with low stability margins affect video bandwidth characteristics of power amplifiers. In this work, a non-connectorized measurement technique is presented to obtain the low-frequency critical poles at internal…
Over sixty years ago, it was hypothesized that specially designed acoustic systems that leveraged the acoustoelectric effect between phonons and charge carriers could revolutionize radio frequency electronic systems by allowing nonlinear…
Graphene, due to its unique electronic structure favoring high carrier mobility, is considered a promising material for use in high-speed electronic devices in the post-silicon electronic era. For this reason, experimental research on…
We present a multi-pass amplifier which passively compensates for distortions of the spherical phase front occurring in the active medium. The design is based on the Fourier transform propagation which makes the output beam parameters…
We present a frequency-shifted feedback (FSF) laser based on a tapered amplifier. The laser operates as a coherent broadband source with up to 370GHz spectral width and 2.3us coherence time. If the FSF laser is seeded by a continuous-wave…