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We propose a practical realization of a field-effect transistor for phonons. Our device is based on a single ionic polymeric molecule and it gives modulations as large as -25% in the thermal conductance for feasible temperatures and…

Mesoscale and Nanoscale Physics · Physics 2010-06-30 Marcos G. Menezes , Aldilene Saraiva-Souza , Jordan Del Nero , Rodrigo B. Capaz

Quantum optics dictates that amplification of a pure state by any linear deterministic amplifier always introduces noise in the signal and results in a mixed output state. However, it has recently been shown that noiseless amplification…

Quantum Physics · Physics 2013-12-18 Mikko Partanen , Teppo Häyrynen , Jani Oksanen , Jukka Tulkki

Resonant frequencies of the two-dimensional plasma in FETs increase with the reduction of the channel dimensions and can reach the THz range for sub-micron gate lengths. Nonlinear properties of the electron plasma in the transistor channel…

In a recent e-print [cond-mat/0603260] Hall and Flatte claim that a particular spin based field effect transistor (SPINFET), which they have analyzed, will have a lower threshold voltage, lower switching energy and lower leakage current…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 S. Bandyopadhyay , M. Cahay

We report on low-temperature noise measurements of a single electron transistor (SET) immersed in superfluid $^4$He. The device acts as a charge sensitive electrometer able to detect the fluctuations of charged defects in close proximity to…

Quantum Physics · Physics 2021-10-27 N. R. Beysengulov , J. R. Lane , J. M. Kitzman , K. Nasyedkin , D. G. Rees , J. Pollanen

The main promise of tunnel FETs (TFETs) is to enable supply voltage ($V_{DD}$) scaling in conjunction with dimension scaling of transistors to reduce power consumption. However, reducing $V_{DD}$ and channel length ($L_{ch}$) typically…

Mesoscale and Nanoscale Physics · Physics 2016-04-08 Hesameddin Ilatikhameneh , Gerhard Klimeck , Rajib Rahman

Power consumption has emerged as a primary design constraint for integrated circuits (ICs). In the Nano meter technology regime, leakage power has become a major component of total power. Full adder is the basic functional unit of an ALU.…

Hardware Architecture · Computer Science 2013-09-11 Karthik Reddy. G

We investigate the noise properties of a superconducting single electron transistor (SSET) coupled to an harmonically driven resonator. Using a Langevin equation approach, we calculate the frequency spectrum of the SSET charge and calculate…

Mesoscale and Nanoscale Physics · Physics 2009-11-13 D. A. Rodrigues , G. J. Milburn

In this article, we propose and experimentally demonstrate a triple-mode single-transistor graphene amplifier utilizing a three-terminal back-gated single-layer graphene transistor. The ambipolar nature of electronic transport in graphene…

Materials Science · Physics 2010-10-07 Xuebei Yang , Guanxiong Liu , Alexander A Balandin , Kartik Mohanram

We describe a microwave amplifier based on the Superconducting Low-inductance Undulatory Galvanometer (SLUG). The SLUG is embedded in a microstrip resonator, and the signal current is injected directly into the device loop. Measurements at…

Superconductivity · Physics 2015-05-30 D. Hover , Y. -F. Chen , G. J. Ribeill , S. Zhu , S. Sendelbach , R. McDermott

An ultrastable low-noise current amplifier (ULCA) is presented. The ULCA is a non-cryogenic instrument based on specially designed operational amplifiers and resistor networks. It involves two stages, the first providing a 1000-fold current…

Instrumentation and Detectors · Physics 2014-08-22 Dietmar Drung , Christian Krause , Ulrich Becker , Hansjörg Scherer , Franz Josef Ahlers

We present an ultra-low noise, high-voltage driver suited for use with piezoelectric actuators and other low-current applications. The architecture uses a flyback switching regulator to generate up to 250V in our current design, with an…

Instrumentation and Detectors · Physics 2016-12-13 N. C. Pisenti , A. Restelli , B. J. Reschovsky , D. S. Barker , G. K. Campbell

A decision feedback circuit with integrated offset compensation is presented in this paper. The circuit is built around the sense amplifier comparator. The feedback loop is closed around the first stage of the comparator resulting in…

Hardware Architecture · Computer Science 2017-02-06 Naveen Kadayinti , Dinesh Sharma

Two large-area, low noise, high speed fluorescence detectors have been built. One detector consists of a photodiode with an area of 28 mm x 28 mm and a low noise transimpedance amplifier. This detector has a input light-equivalent spectral…

Atomic Physics · Physics 2009-11-11 S. Bickman , D. DeMille

The measurement of a quantum system is often performed by encoding its state in a single observable of a light field. The measurement efficiency of this observable can be reduced by loss or excess noise on the way to the detector. Even a…

General quantum restrictions on the noise performance of linear transistor amplifiers are used to identify the region in parameter space where the quantum-limited performance is achievable and to construct a practical procedure for…

Other Condensed Matter · Physics 2009-11-11 U. Gavish , B. Yurke , Y. Imry

We present the first experimental study of a new type of power recycling microwave interferometer designed for low noise measurements. This system enhances sensitivity to phase fluctuations in a Device Under Test, independent of input power…

Instrumentation and Detectors · Physics 2016-11-17 Stephen Parker , Eugene Ivanov , Michael Tobar

Printed polymer electronics has held for long the promise of revolutionizing technology by delivering distributed, flexible, lightweight and cost-effective applications for wearables, healthcare, diagnostic, automation and portable devices.…

Parametric amplifiers have become a workhorse in superconducting quantum computing, however research and development of these devices has been hampered by inconsistent, and sometimes misleading noise performance characterization…

Quantum Physics · Physics 2023-12-25 M. Malnou , T. F. Q. Larson , J. D. Teufel , F. Lecocq , J. Aumentado

Gate capacitances of back-gated nanowire field-effect transistors (NW-FETs) are calculated by means of finite element methods and the results are compared with analytical results of the ``metallic cylinder on an infinite metal plate…

Other Condensed Matter · Physics 2009-11-11 Olaf Wunnicke