Related papers: Very simple FET amplifier with a voltage noise flo…
The growing number of phased array feeds (PAF) being built for radio astronomy demonstrates an increasing need for low noise amplifiers (LNA) that are designed for repeatability, low noise, and ease of manufacture. Specific design features…
An n-channel accumulation-type field effect transistor (FET) has been fabricated utilizing a KTaO3 single crystal as an active element and a sputtered amorphous Al2O3 film as a gate insulator. The device demonstrated an ON/OFF ratio of 10^4…
The continuous down-scaling of transistors has been the key to the successful development of current information technology. However, with Moore's law reaching its limits, the development of alternative transistor architectures is urgently…
In this paper, we demonstrate by simulation the general usability of an electrostatically doped and electrically reconfigurable planar field-effect transistor (FET) structure. The device concept is partly based on our already published and…
This paper presents a low noise amplifier for large arrays of silicon photomultipliers (SiPMs) operated in cryogenic environments, especially liquid argon (87 K) and liquid nitrogen (77 K). The goal is for one amplifier to read out a total…
Modern electronics are developing electronic-optical integrated circuits, while their electronic backbone, e.g. field-effect transistors (FETs), remains the same. However, further FET down scaling is facing physical and technical…
We present results on Rydberg atom-based electric field sensing in the range of 1 kHz - 300 MHz, using a three-photon Rydberg excitation scheme and a transverse electromagnetic (TEM) line waveguide to apply low-frequency rf fields to the…
We show that a cryogenic amplifier composed of a homemade GaAs high-electron-mobility transistor (HEMT) is suitable for current-noise measurements in a mesoscopic device at dilution-refrigerator temperatures. The lower noise characteristics…
We propose an explicit small-signal graphene field-effect transistor (GFET) parameter extraction procedure based on a charge-based quasi-static model. The dependence of the small-signal parameters on both gate voltage and frequency is…
A novel room temperature capacitance-to-phase transducer is described, which uses a modified All-Pass filter architecture combined with a simple series resonant tank circuit with a moderate Q-factor. It is fashioned from a discrete inductor…
In this letter we present the results of systematic experimental investigations of the effect of different chemical environments on the low frequency resistance fluctuations of single layer graphene field effect transistors (SLG-FET). The…
We demonstrate graphene thickness-graded transistors with high electron mobility and low 1/f noise (f is a frequency). The device channel is implemented with few-layer graphene with the thickness varied from a single layer in the middle to…
We report results of experimental investigation of the low-frequency noise in the top-gate graphene transistors. The back-gate graphene devices were modified via addition of the top gate separated by 20 nm of HfO2 from the single-layer…
A novel topology for a high gain two-stage amplifier is proposed. The proposed circuit is designed in a way that the non-dominant pole is at output of the first stage. A positive capacitive feedback (PCF) around the second stage introduces…
Quantum mechanics imposes that any amplifier that works independently on the phase of the input signal has to introduce some excess noise. The impossibility of such a noiseless amplifier is rooted into unitarity and linearity of quantum…
An evaluation of the gate capacitance of a field-effect transitor (FET) whose channel length and width are several ten nanometer, is a key point for sensors applications. However, experimental and precise evaluation of capacitance in the aF…
A graphene field-effect-transistor (GFET) model calibrated with extracted device parameters and a commercial 65 nm silicon MOSFET model are compared with respect to their radio frequency behavior. GFETs slightly lag behind CMOS in terms of…
One of the basic parameters of a CCD camera is its gain, i.e. the number of detected electrons per output Analogue to Digital Unit (ADU). This is normally determined by finding the statistical variances from a series of flat-field exposures…
Common-mode choke inductors are useful tools for resolving grounding issues in large detector systems. Using inductive components on cryogenic pre-amplifier boards has so far been prevented by the poor low-temperature performance of common…
A quantum-limited amplifier enables the amplification of weak signals while introducing minimal noise dictated by the principles of quantum mechanics. These amplifiers serve a broad spectrum of applications in quantum computing, including…