Related papers: Very simple FET amplifier with a voltage noise flo…
A wide-band current preamplifier based on a composite operational amplifier is proposed. It has been shown that the bandwidth of the preamplifier can be significantly increased by enhancing the effective open-loop gain of the composite…
A near threshold all-optical backaction amplifier is realized. Operating near threshold in an integrated micronscale architecture allows a nearly three orders of magnitude improvement in both gain and optical power requirements over the…
The progress of the Internet of Things(IoT) technologies and applications requires the efficient low power circuits and architectures to maintain and improve the performance of the increasingly growing data processing systems. Memristive…
The carrier mobility \mu of few-layer graphene (FLG) field-effect transistors increases ten-fold when the SiO_2 substrate is replaced by single-crystal epitaxial Pb(Zr_0.2Ti_0.8)O_3 (PZT). In the electron-only regime of the FLG, \mu reaches…
We present an impedance engineered Josephson parametric amplifier capable of providing bandwidth beyond the traditional gain-bandwidth product. We achieve this by introducing a positive linear slope in the imaginary component of the input…
The stability properties of Fourier-based multipass amplifier to misalignments (tilts) of its optical components has been investigated. For this purpose, a method to quantify the sensitivity to tilts based on the amplifier small signal gain…
A dual-gate graphene field-effect transistors is presented, which shows improved RF performance by reducing the access resistance using electrostatic doping. With a carrier mobility of 2700 cm2/Vs, a cutoff frequency of 50 GHz is…
A topological quantum field effect transistor (TQFET) uses electric field to switch a material from topological insulator ("on", with conducting edge states) to a conventional insulator ("off"), and can have low subthreshold swing due to…
We introduce a novel measurement method for the phase noise measurement of optical amplifiers, topologically similar to the Heterodyne Mach-Zehnder Interferometer but governed by different principles, and we report on the measurement of a…
The field effect transistors (FETs) exhibited ultrahigh responsivity (107 A/W) to infrared light with great improvement of mobility in graphene / PbS quantum dot (QD) hybrid. These reported transistors are either unipolar or depletion mode…
Amplifiers are crucial in every experiment carrying out a very sensitive measurement. However, they always degrade the information by adding noise. Quantum mechanics puts a limit on how small this degradation can be. Theoretically, the…
Few-layer black phosphorus, a new elemental 2D material recently isolated by mechanical exfoliation, is a high-mobility layered semiconductor with a direct bandgap that is predicted to strongly depend on the number of layers, from 0.35 eV…
In this article, we present a configurable field-effect transistor (FET), where not only polarity (n- and p-type), but the conduction mechanism of a FET can also be configured dynamically. As a result, we can have both types of devices,…
The resolution of low-frequency resistance noise measurements can be increased by amplitude modulation, shifting the spectrum of the resistance fluctuations away from the 1/f noise contributed by measurement instruments. However, commercial…
We propose, theoretically, a new type of quantum field effect transistor that operates purely on the flow of spin current in the absence of charge current. This spin field effect transistor (SFET) is constructed without any magnetic…
Transistor is a three terminal semiconductor device normally used as an amplifier or as a switch. Here the alternating current (a.c) rectifying property of the transistor is considered. The ordinary silicon diode exhibits a voltage drop of…
In this paper, we report a new scheme to amplify a microwave signal carried on a laser light at $\lambda$=852nm. The amplification is done via a semiconductor tapered amplifier and this scheme is used to drive stimulated Raman transitions…
Josephson junction parametric amplifiers have become essential tools for microwave quantum circuit readout with minimal added noise. Even after improving at an impressive rate in the last decade, they remain vulnerable to magnetic field,…
A single-electron inverter was fabricated that switches from a high output to a low output when a fraction of an electron is added to the input. For the proper operation of the inverter, the two single-electron transistors that make up the…
Graphene has extremely low mass density and high mechanical strength, key qualities for efficient wide-frequency-response electrostatic audio speaker design. Low mass ensures good high frequency response, while high strength allows for…