Related papers: Very simple FET amplifier with a voltage noise flo…

The operation of a typical common emitter amplifier, including negative feedback, is studied taking into account the non-linearity characteristic of real-world transistors. This has been accomplished by employing a recently proposed Early…

Bottom-up synthesized GNRs and GNR heterostructures have promising electronic properties for high performance field effect transistors (FETs) and ultra-low power devices such as tunnelling FETs. However, the short length and wide band gap…

Present semiconductor research is increasingly focusing on either higher speeds or higher linearity or both. Applications range from consumer, industrial, healthcare and military. Typically such circuits are fabricated in today's…

Surface plasmon polariton amplification gives the possibility to overcome strong absorption in the metal and design truly nanoscale devices for on-chip photonic circuits. However, the process of stimulated emission in the gain medium is…

Conventional scanning tunneling microscopy (STM) is limited to a bandwidth of circa 1kHz around DC. Here, we develop, build and test a novel amplifier circuit capable of measuring the tunneling current in the MHz regime while simultaneously…

We study a possible circuit solution to overcome the problem of low voltage gain of short-channel graphene FETs. The circuit consists of a fully differential amplifier with a load made of a cross-coupled transistor pair. Starting from the…

This paper reviews the emergence and progress of phosphorene FETs, all within about a year. In such a short time, back-gated FETs evolved into top-gated FETs, gate length was reduced to the sub-micron range, passivation by high-k…

Here we propose and analyze the behavior of a FET--like switching device, the Mott transition field effect transistor, operating on a novel principle, the Mott metal--insulator transition. The device has FET-like characteristics with a low…

Nanopositioning techniques currently applied to characterize physical properties of materials interesting for applications at the microscopic scale rely on high-voltage electronic control circuits that should have the lowest possible noise…

Indium-Arsenide (InAs) nanowire field-effect transistors (NWFETs) are promising platforms for high-speed, low-power nanoelectronics operating at cryogenic conditions, relevant for quantum information processing. We use selective area growth…

Carbon electronics based on carbon nanotube array field-effect transistors (AFETs) and 2-dimensional graphene field-effect transistors (GFETs) have recently attracted significant attention for potential RF applications. Here, we explore the…

A recently introduced Early modeling of transistors is applied to the study of the common collector amplifier (or emitter follower), an important type of electronic circuit typically employed as buffer, being characterized by near unit…

The task of this work was to design and later produce a low-power (single supply 5 - 30 V, dual supply +-2.5 V and +-15 V) rail-to-rail operational amplifier aRD820 with low voltage noise (<4 uV, p-p. 0.1 to 10 Hz), ultralow input bias…

This paper proposes a low-power and low-noise instrumentation amplifier (IA) tailored for bioimpedance sensing applications. The design originates from a gain-boosted flipped voltage follower (FVF) transconductance (TC) stage and integrates…

To search for dark matter candidates with masses below $\mathcal{O}$(MeV), the SPLENDOR (Search for Particles of Light dark mattEr with Narrow-gap semiconDuctORs) experiment is developing novel narrow-bandgap semiconductors with electronic…

Organic printed electronics is proving its suitability for the development of wearable, lightweight, distributed applications in combination with cost-effective production processes. Nonetheless, some necessary features for several…

Thanks to recent progress in terms of materials properties, polymer field-effect transistors (FETs) operating in the MHz range can be achieved. However, further development towards challenging frequency ranges, for a field accustomed to…

We employ a cryogenic High Electron Mobility Transistor (HEMT) amplifier to increase the bandwidth of a charge detection setup with a quantum point contact (QPC) charge sensor. The HEMT is operating at 1K and the circuit has a bandwidth of…

This paper presents a compact low-power, low-noise bioamplifier for multi-channel electrode arrays, aimed at recording action potentials. The design we put forth attains a notable decrease in both size and power consumption. This is…

In this letter, we demonstrate the first BN/Graphene/BN field effect transistor for RF applications. The BN/Graphene/BN structure can preserve the high mobility of graphene, even when it is sandwiched between a substrate and a gate…