Related papers: Very simple FET amplifier with a voltage noise flo…
A small-signal equivalent circuit for graphene field-effect transistors is proposed considering the explicit contribution of effects at the metal-graphene interfaces by means of contact resistances. A methodology to separate the contact…
The unique optoelectronic properties of graphene [1] make it an ideal platform for a variety of photonic applications [2], including fast photodetectors [3], transparent electrodes [4], optical modulators [5], and ultra-fast lasers [6].…
We fabricated a large number of single and bilayer graphene transistors and carried out a systematic experimental study of their low-frequency noise characteristics. A special attention was given to determining the dominant noise sources in…
It is well known that conventional Field Effect Transistors (FET's) require a change in the channel potential of at least 60 mV at 300K to effect a change in the current by a factor of ten, and this minimum subthreshold slope S puts a lower…
Field-effect transistors (FETs) predominantly utilize electrons for signal processing in modern electronics. In contrast, phonon-based field-effect transistors (PFETs)-which employ phonons for active thermal management-remain markedly…
Nonlinear amplifiers such as the transistor are ubiquitous in classical technology, but their quantum analogues are not well understood. We introduce a class of nonlinear amplifiers that amplify any normal operator and add only a…
We propose a new type of cryogenic current amplifiers, in which low-frequency power spectrum of current can be measured through a measurement of microwave response of a superconducting resonant circuit shunted by a series array of Josephson…
Thickness engineered tunneling field-effect transistors (TE-TFET) as a high performance ultra-scaled steep transistor is proposed. This device exploits a specific property of 2D materials: layer thickness dependent energy bandgap (Eg).…
Understanding the amplifier phase noise is a critical issue in numerous fields of engineering and physics, like oscillators, frequency synthesis, telecommunications, radars, spectroscopy, in the emerging domain of microwave photonics, and…
The cable capacitance in cryogenic and high vacuum applications of quartz tuning forks imposes severe constraints on the bandwidth and noise performance of the measurement. We present a single stage low noise transimpedance amplifier with a…
Carbon Nanotube Field Effect Transistor (CNFET) is a promising new technology that overcomes several limitations of traditional silicon integrated circuit technology. In recent years, the potential of CNFET for analog circuit applications…
Ubiquitous low frequency 1/f noise can be a limiting factor in the performance and application of nanoscale devices. Here, we quantitatively investigate low frequency electronic noise in single-layer transition metal dichalcogenide MoS2…
Solid state amplifiers are being increasingly used instead of electronic vacuum tubes to feed accelerating cavities with radio frequency power in the 100 kW range. Power is obtained from the combination of hundreds of transistor amplifier…
We present the results of the experimental investigation of the low - frequency noise in bilayer graphene transistors. The back - gated devices were fabricated using the electron beam lithography and evaporation. The charge neutrality point…
The SPLENDOR Collaboration studies novel narrow-gap semiconductors and engineered a substrate agnostic detector platform to achieve $\mathcal{O}$(meV) energy sensitivity designed for low mass dark matter searches. This was achieved using…
A four-stage operational transconductance amplifier (OTA) for ultra-low-power applications is introduced in this paper. The proposed circuit inclusive of frequency compensation requires minimal transistor count and passives, overcoming the…
The paper discusses an application of the field effected transistor (FET) as a voltage controlled resistance which can be done in under-graduate labs either as a routine experiment or as a project.
The present article primarily focuses on the design of an ultra-low-noise amplifier specifically tailored for quantum applications. The circuit design places a significant emphasis on improving the noise figure, as quantum-associated…
We report the 1/f noise characteristics at low-frequency in graphene field-effect transistors that utilized a high-k dielectric tantalum oxide encapsulated layer (a few nanometers thick) placed by atomic layer deposition on Si3N4. A…
We show that the sensitivity of antenna-coupled field-effect transistors (FETs) to terahertz (THz) radiation improves continuously with decreasing temperature. The noise-equivalent power (NEP) of 540 GHz patch-antenna-coupled FETs decreases…