Related papers: The mechanism of ion induced amorphization in Si
We report on the effects of ionizing radiation on 65nm CMOS transistors held at approximately -20C during irradiation. The pattern of damage observed after a total dose of 1 Grad is similar to damage reported in room temperature exposures,…
We study phonon-mediated transitions between translational levels of an atom in a surface-induced potential. We present a general master equation governing the dynamics of the translational states of the atom. In the framework of the Debye…
Neutron irradiation tends to promote disorder in ordered alloys through the action of the thermal spikes that it generates, while simultaneously introducing point defects and defect clusters. As they migrate, these point defects will…
In this paper, we report the measurements of specific heat of an amorphous $Ti_{9.5}Si_{90.5}$ alloy located very close to the critical point of the metal-insulator transition. In the presence of a magnetic field, the specific heat is…
The response of 5-mol% Gd-doped ceria to swift heavy ion beam irradiation has been studied to observe the effects of changes in ion energies and environmental temperature. The study involved irradiating two different grain sizes (nano and…
The intermetallic compound Zr3Al is severely deformed by the method of repeated cold rolling. By X-ray diffraction it is shown that this leads to amorphization. TEM investigations reveal that a homogeneously distributed debris of very small…
Avrami's model describes the kinetics of phase transformation under the assumption of spatially random nucleation. In this paper we provide a quasi-exact analytical solution of Avrami's model when the transformation takes place under…
We report 4-probe resistivity measurements of cold-rolled Ni and Fe during 100 MeV oxygen ion irradiation, at 300K. The resistivity shows increase and saturation, marked by jumps. Employing 200 MeV silver ion irradiation of Fe and Si(100)…
The temperature dependence of the first-order phonon mode of single crystal of Silicon (Si) is determined by Raman scattering in a broad temperature range of 4-623 K. Our studies reveal the anomalous red-shift of the Raman active phonon…
Making use of a simple approximation for the evolution of the radial distribution function, we calculate the temperature dependence of the heat capacity $C_v$ of Ar at constant density. $C_v$ decreases with temperature roughly according to…
The structural and electrical characterizations of mechanically-milled (MM) amorphous fast ionic conductors (a-FICs), viz. xAgI (100-x)[0.67 Ag\_2 O-0.33V\_2O\_5] (x = 40, 50, 55 and 70) have been reported. The amorphisation is restricted…
A study is presented of the structural changes occurring as a function of the annealing conditions in hydrogenated amorphous Si/Ge multilayers prepared by sputtering. Annealing changes the structure of the as-deposited multilayer except for…
The doping dependence of dry thermal oxidation rates in n-type 4H-SiC was investigated. The oxidation was performed in the temperature range 1000C to 1200C for samples with nitrogen doping in the range of 6.5e15/cm3 to 9.3e18/cm3, showing a…
Based on the parameters from published ab-inito theoretical and experimental studies, and combining Molecular Dynamics (MD) and kinetic Monte Carlo (KMC) simulations, a framework of multi-scale modeling is developed to investigate the…
Available simulation methods, suitable to describe solid-solid phase transitions occurring upon increasing of presssure and/or temperature, are based on empirical interatomic potentials: this restriction reduces the predictive power, and…
The 133.5 nm lines are important observables for the NASA/SMEX mission Interface Region Imaging Spectrograph (IRIS). To make 3D non-LTE radiative transfer computationally feasible it is crucial to have a model atom with as few levels as…
Growth evolution of InN nanostructures via a chemical vapor deposition technique is reported using In_2O_3 as precursor material and NH_3 as reactive gas in the temperature range of 550-700 ^oC. Morphology of the nanostructures solely…
The sub-barrier fusion excitation functions are measured for the first time for the system $^7$Li +$^{28}$Si by the characteristic $\gamma$-ray method in the energy range $E_{lab}$= 7-11.5 MeV. The results show an enhancement, below the…
Fe-Cr binary alloys serve as simplified model systems to study irradiation damage relevant to fusion structural materials. Here, Fe-3%Cr and Fe-5%Cr samples were irradiated with 4 MeV Fe ions under a dose rate of 4x10^5 dpa/s across a…
The kinetics of intrinsic and dopant-enhanced solid phase epitaxy (SPE) are stud- ied in buried amorphous Si (a-Si) layers in which SPE is not retarded by H. As, P, B and Al profiles were formed by multiple energy ion implantation over a…