Related papers: The mechanism of ion induced amorphization in Si
CeRuSn exhibits an extraordinary room temperature structure at 300~K with coexistence of two types of Ce ions, namely trivalent Ce$^{3+}$ and intermediate valent Ce$^{(4-\delta)+}$, in a metallic environment. The ordered arrangement of…
6H-SiC (silicon carbide) single crystals containing VSi-VC divacancies are investigated with respect to magnetic and structural properties. We found that an initial increase of structural disorder leads to pronounced ferromagnetic…
We employed ab-initio molecular dynamics to directly simulate the effects of Ag alloying ($\sim5%$ Ag concentration) on the phase change properties of Ge$_{2}$Sb$_{2}$Te$_{5}$. The short range order is preserved, whereas a slight…
We have investigated the dynamics of Na ions in amorphous Na2Si2O5, a potential solid electrolyte material for Na-battery. We have employed quasielastic neutron scattering (QENS) technique in the amorphous Na2Si2O5 from 300 to 748 K to…
In this paper evolution of silicon surface topography, under low energy ion bombardment, is investigated at higher oblique incident angles in the range of 63\degree-83\degree. Si(100) substrates were exposed to 500 eV argon ions. Different…
The chemical changes of Ti/Er/n-Si(100) stacks evaporated in high vacuum and grown ex situ by rapid thermal annealing were scrutinized. The emphasis was laid on the evolution with the annealing temperature of (i) the Er-Si solid-state…
We performed a measurement of the ionization response of 200 $\mu$m-thick amorphous selenium (aSe) layers under drift electric fields of up to 50 V/$\mu$m. The aSe target was exposed to ionizing radiation from a $^{57}$Co radioactive source…
The dynamic magnetic properties of Ni nanoparticles diluted in an amorphous SiO2 matrix prepared from a modified sol-gel method have been studied by the frequency f dependence of the ac magnetic susceptibility \c{hi}(T). For samples with…
The structural and dynamic properties of silica melts under high pressure are studied using molecular dynamics (MD) computer simulation. The interactions between the ions are modeled by a pairwise-additive potential, the so-called CHIK…
Si hyperdoped with chalcogens (S, Se, Te) is well-known to possess unique properties such as an insulator-to-metal transition and a room-temperature sub-bandgap absorption. These properties are expected to be sensitive to a post-synthesis…
Cross-sectional transmission electron microscopy (TEM) is used to characterize an amorphous layer observed at the interface in graphite and graphene films grown via thermal decomposition of C-face 4H-SiC. The amorphous layer does not to…
The c(6x2) is a reconstruction of the SrTiO3(001) surface that is formed between 1050-1100oC in oxidizing annealing conditions. This work proposes a model for the atomic structure for the c(6x2) obtained through a combination of results…
We succeeded in remarkably nice theoretical description of the temperature dependence of the paramagnetic susceptibility of Ba$_2$YMoO$_6$ in the whole temperature range as originating from the atomic-scale discrete electronic structure of…
Compared to the widely investigated crystalline polymorphs of gallium oxide (Ga2O3), knowledge about its amorphous state is still limited. With the help of a machine-learning interatomic potential, we conducted large-scale atomistic…
The element Ce exhibits an isostructural $\gamma-\alpha$ phase transition with a 15\% volume change at room temperature. The phase boundary ends in a critical point at 1.5 GPa and 480 K. We describe a model for the equation of state of Ce…
We study the thermalization, injection, and acceleration of ions with different mass/charge ratios, $A/Z$, in non-relativistic collisionless shocks via hybrid (kinetic ions-fluid electrons) simulations. In general, ions thermalize to a…
A major challenge for Atom Probe Tomography (APT) quantification is the inability to decouple ions which possess the same mass/charge-state ($m/n$) ratio but a different mass. For example, $^{75}{\rm{As}}^{+}$ and $^{75}{\rm{As}}{_2}^{2+}$…
At ambient conditions, SiC is known to be resistant to irradiation with swift heavy ions (SHI) decelerating in the electronic stopping regime. However, there is no experimental data on the SiC irradiation at elevated temperatures. To…
The dielectric function of alpha'NaV2O5 was measured with electric field along the a and b axes in the photon energy range 0.8-4.5 eV for temperatures down to 4K. We observe a pronounced decrease of the intensity of the 1 eV peak upon…
Amorphous Si (a-Si) nanostructures are ubiquitous in numerous electronic and optoelectronic devices. Amorphous materials are considered to possess the lower limit to the thermal conductivity (k), which is ~1 W/m-K for a-Si. However, recent…