Rise and fall of defect induced ferromagnetism in SiC single crystals

Lin Li; S. Prucnal; S. D. Yao; K. Potzger; W. Anwand; A. Wagner; Shengqiang Zhou

doi:10.1063/1.3597629

Rise and fall of defect induced ferromagnetism in SiC single crystals

Materials Science 2011-06-07 v1

Authors: Lin Li , S. Prucnal , S. D. Yao , K. Potzger , W. Anwand , A. Wagner , Shengqiang Zhou

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Abstract

6H-SiC (silicon carbide) single crystals containing VSi-VC divacancies are investigated with respect to magnetic and structural properties. We found that an initial increase of structural disorder leads to pronounced ferromagnetic properties at room temperature. Further introduction of disorder lowers the saturation magnetization and is accompanied with the onset of lattice amorphization. Close to the threshold of full amorphization, also divacancy clusters are formed and the saturation magnetization nearly drops to zero.

Keywords

defect induced ferromagnetism SiC single crystals divacancies amorphization saturation magnetization diluted magnetic semiconductors

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@article{arxiv.1106.0966,
  title  = {Rise and fall of defect induced ferromagnetism in SiC single crystals},
  author = {Lin Li and S. Prucnal and S. D. Yao and K. Potzger and W. Anwand and A. Wagner and Shengqiang Zhou},
  journal= {arXiv preprint arXiv:1106.0966},
  year   = {2011}
}

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12 pages, 1 figure

Rise and fall of defect induced ferromagnetism in SiC single crystals

Abstract

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