Crystallographic disorder and electron scattering on structural two-level systems in ZrAs1.4Se0.5

M. Schmidt; T. Cichorek; R. Niewa; A. Schlechte; Y. Prots; F. Steglich; R. Kniep

doi:10.1088/0953-8984/17/36/004

Crystallographic disorder and electron scattering on structural two-level systems in ZrAs1.4Se0.5

Strongly Correlated Electrons 2015-06-25 v1

Authors: M. Schmidt , T. Cichorek , R. Niewa , A. Schlechte , Y. Prots , F. Steglich , R. Kniep

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Abstract

Single crystals of ZrAs1.4Se0.5 (PbFCl type structure) were grown by chemical vapour transport. While their thermodynamic and transport properties are typical for ordinary metals, the electrical resistivity exhibits a shallow minimum at low temperatures. Application of strong magnetic fields does not influence this anomaly. The minimum of the resistivity in ZrAs1.4Se0.5 apparently originates from interaction between the conduction electrons and structural two-level systems. Significant disorder in the As-Se substructure is inferred from X-ray diffraction and electron microprobe studies.

Keywords

crystallographic disorder electron scattering structural two-level systems Zirconium arsenide selenide resistivity minimum

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@article{arxiv.cond-mat/0504485,
  title  = {Crystallographic disorder and electron scattering on structural two-level systems in ZrAs1.4Se0.5},
  author = {M. Schmidt and T. Cichorek and R. Niewa and A. Schlechte and Y. Prots and F. Steglich and R. Kniep},
  journal= {arXiv preprint arXiv:cond-mat/0504485},
  year   = {2015}
}

Crystallographic disorder and electron scattering on structural two-level systems in ZrAs1.4Se0.5

Abstract

Keywords

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