Room temperature ferromagnetism in Cr-doped hydrogenated amorphous Si films

Jia-Hsien Yao; Hsiu-Hau Lin; Tsung-Shune Chin

doi:10.1063/1.2946662

Room temperature ferromagnetism in Cr-doped hydrogenated amorphous Si films

Materials Science 2009-11-13 v1

Authors: Jia-Hsien Yao , Hsiu-Hau Lin , Tsung-Shune Chin

View on arXiv ↗ PDF ↗ DOI ↗

Abstract

Ferromagnetism above room temperature was observed in Cr-doped hydrogenated amorphous silicon films deposited by rf magnetron-sputtering. Structure analysis reveals that films are amorphous without any detectable precipitates up to the solubility limit 16 atomic percentages of Cr. Experimental results suggest that hydrogenation has a dramatic influence on magnetic properties, electrical conductivity and carrier concentration in the thin films. Pronounced anomalous Hall effect and magnetization curve both suggest the origin of the ferromagnetism may arises from percolation of magnetic polarons.

Keywords

room temperature ferromagnetism Cr-doped hydrogenated amorphous silicon rf magnetron sputtering magnetic polarons anomalous Hall effect diluted magnetic semiconductor

Cite

@article{arxiv.0901.4123,
  title  = {Room temperature ferromagnetism in Cr-doped hydrogenated amorphous Si films},
  author = {Jia-Hsien Yao and Hsiu-Hau Lin and Tsung-Shune Chin},
  journal= {arXiv preprint arXiv:0901.4123},
  year   = {2009}
}

Comments

3 pages, 4 figures

Related papers

View all related →