High Curie temperatures in ferromagnetic Cr-doped AlN thin films

D. Kumar; J. Antifakos; M. G. Blamire; Z. H. Barber

doi:10.1063/1.1763216

High Curie temperatures in ferromagnetic Cr-doped AlN thin films

Materials Science 2016-11-25 v1

Authors: D. Kumar , J. Antifakos , M. G. Blamire , Z. H. Barber

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Abstract

Al1-xCrxN thin films with $0.02\le x \le 0.1$ were deposited by reactive co-sputtering onto c-plane (001) sapphire. Room-temperature ferromagnetism with a coercive field of 85 Oe was observed in samples with chromium contents as low as x = 0.027 (2.7%). With increasing Cr content the mean magnetic moment is strongly suppressed, with a maximum saturation moment of 0.62 and 0.71 $\mu_B$ per Cr atom at 300 and 50 K respectively. We show that the Curie temperature of Al1-xCrxN for x = 0.027 is greater than 900 K.

Keywords

Curie temperature ferromagnetism Cr-doped AlN thin films reactive co-sputtering diluted magnetic semiconductors

Cite

@article{arxiv.cond-mat/0404436,
  title  = {High Curie temperatures in ferromagnetic Cr-doped AlN thin films},
  author = {D. Kumar and J. Antifakos and M. G. Blamire and Z. H. Barber},
  journal= {arXiv preprint arXiv:cond-mat/0404436},
  year   = {2016}
}

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