English

Itinerant Ferromagnetism in the electronic localization limit

Strongly Correlated Electrons 2011-01-11 v2 Mesoscale and Nanoscale Physics

Abstract

We present Hall effect, Rxy(H)R_{xy}(H), and magnetoresistance, Rxx(H)R_{xx}(H), measurements of ultrathin films of Ni, Co and Fe with thicknesses varying between 0.2-8 nm and resistances between 1 MΩ\Omega - 100 Ω.\Omega. Both measurements show that films having resistance above a critical value, RCR_{C}, (thickness below a critical value, dCd_{C}) show no signs for ferromagnetism. Ferromagnetism appears only for films with R<RCR<R_{C}, where RCR_{C} is material dependent. We raise the possibility that the reason for the absence of spontaneous magnetization is suppression of itinerant ferromagnetism by electronic disorder in the strong localization regime.

Keywords

Cite

@article{arxiv.0810.4081,
  title  = {Itinerant Ferromagnetism in the electronic localization limit},
  author = {N. Kurzweil and E. Kogan and A. Frydman},
  journal= {arXiv preprint arXiv:0810.4081},
  year   = {2011}
}

Comments

4 pages, 4 figures

R2 v1 2026-06-21T11:33:51.837Z