Structural modifications induced in hydrogenated amorphous Si/Ge multilayers by heat treatments

C. Frigeri; M. Serenyi; A. Csik; Z. Erdelyi; D. L. Beke; L. Nasi

Structural modifications induced in hydrogenated amorphous Si/Ge multilayers by heat treatments

Materials Science 2009-02-12 v1

Authors: C. Frigeri , M. Serenyi , A. Csik , Z. Erdelyi , D. L. Beke , L. Nasi

Abstract

A study is presented of the structural changes occurring as a function of the annealing conditions in hydrogenated amorphous Si/Ge multilayers prepared by sputtering. Annealing changes the structure of the as-deposited multilayer except for the less severe conditions here applied (150 oC, time<22 h). For higher temperatures and/or times, the modifications consist of layer intermixing and surface degradation in the shape of bumps and craters. They are argued to be due to the formation of H bubbles upon heating. Hydrogen should be mostly released from the amorphous Ge layers.

Keywords

hydrogenated amorphous silicon/germanium multilayers sputtering annealing structural modifications layer intermixing hydrogen bubble formation

Cite

@article{arxiv.0902.1814,
  title  = {Structural modifications induced in hydrogenated amorphous Si/Ge multilayers by heat treatments},
  author = {C. Frigeri and M. Serenyi and A. Csik and Z. Erdelyi and D. L. Beke and L. Nasi},
  journal= {arXiv preprint arXiv:0902.1814},
  year   = {2009}
}

Related papers

View all related →