Related papers: Photoconductive gain in semiconductor quantum wire…
We present a theoretical model of split-gate quantum wires that are fabricated from GaAs-AlGaAs heterostructures. The model is built on the physical properties of donors and of semiconductor surfaces, and considerations of equilibrium in…
The integer quantum Hall effect is a well-studied phenomenon at frequencies below about 100 Hz. The plateaus in high-frequency Hall conductivity were experimentally proven to retain up to 33 GHz, but the behavior at higher frequencies has…
Molecular beam epitaxy is employed to manufacture self-assembled InAs/GaAs quantum dot Schottky resonant tunneling diodes. By virtue of a thin AlAs insertion barrier, the thermal current is effectively reduced and electron resonant…
Planar light-emitting diodes (LEDs) fabricated within a single high-mobility quantum well are demonstrated. Our approach leads to a dramatic reduction of radiative lifetime and junction area with respect to conventional vertical LEDs,…
We calculate the electronic resistivity of a GaAs-based semiconductor quantum wire in the presence of acoustic phonon scattering. We find that the usual Drude-Boltzmann transport theory leads to a low temperature activated behavior instead…
We measured the absorption spectrum of a single T-shaped, 14x6 nm lateral-sized quantum wire embedded in an optical waveguide using waveguide-transmission spectroscopy at 5 K. In spite of its small volume, the one-dimensional-exciton ground…
We report quantum interference effects in InAs semiconductor nanowires strongly coupled to superconducting electrodes. In the normal state, universal conductance fluctuations are investigated as a function of magnetic field, temperature,…
We recently demonstrated orders of magnitude enhancement of two-photon absorption (2PA) in direct gap semiconductors due to intermediate state resonance enhancement for photons of very different energies. It can be expected that further…
Semiconducting carbon nanotubes under high electric field stress (~10 V/um) display a striking, exponential current increase due to avalanche generation of free electrons and holes. Unlike in other materials, the avalanche process in such…
We present a theoretical study of the magnetic band structure of conduction and valence states in Quantum Well Wires in high magnetic fields. We show that hole mixing results in a very complex behavior of valence edge states with respect to…
Cubic InGaN/GaN multi quantum wells (MQWs) with high structural and optical quality are achieved by utilizing free-standing 3C-SiC (001) substrates and optimizing InGaN quantum well growth. Superlattice peaks up to 5th order are clearly…
A theory of light transmission through a quantum well (QW) in a magnetic field perpendicular to the QW plane is developed. The light wave length is supposed comparable with the QW width. The formulas for reflection, absorption and…
Terahertz photoconductivity of $100~\mu$m and $20~\mu$m Hall bars fabricated from narrow AlAs quantum wells (QWs) of different widths is investigated in this paper. The photoresponse is dominated by collective magnetoplasmon excitations…
We investigate the ultrafast optoelectronic properties of single Al0.3Ga0.7As/GaAs-core-shell-nanowires. The nanowires contain GaAs-based quantum wells. For a resonant excitation of the quantum wells, we find a picosecond photocurrent which…
Realizing both ultra-low breakdown voltage and ultra-high gain has been one of the major challenges in the development of high-performance avalanche photodetector. Here, we report that an ultra-high avalanche gain of 3*10^5 can be realized…
Resonant Rayleigh scattering of light from electrons confined in gallium arsenide double quantum wells displays significant changes at temperatures that are below one degree Kelvin. The Rayleigh resonance occurs for photon energies that…
Franz-Keldysh effect is expressed in the smearing of the absorption edge in semiconductors under high electric fields. While Franz and Keldysh considered a limited case of externally applied uniform electric field, the same effect may be…
A highly superlinear in radiation intensity photoconductance induced by terahertz laser radiation with moderate intensities has been observed in quantum point contacts made of GaAs quantum wells operating in the deep tunneling regime. For…
Finding alternative optoelectronic mechanisms that overcome the limitations of conventional semiconductor devices is paramount for detecting and harvesting low-energy photons. A highly promising approach is to drive a current from the…
Dark current is shown to be significantly reduced in quantum well infrared photodetectors in the tunneling regime, i.e. at very low temperature, by shifting the dopant impurity layers away from the central part of the wells. This result…