Related papers: Photoconductive gain in semiconductor quantum wire…
Quantum anomalous Hall effect (QAHE) is significant for future low-power electronics devices, where a main challenge is realizing QAHE at high temperatures. In this work, based on experimentally reported two-dimensional (2D) germanene and…
We experimentally demonstrate an integrated semiconductor ridge microcavity source of counterpropagating twin photons at room temperature in the telecom range. Based on parametric down conversion with a counterpropagating phase-matching,…
We demonstrate THz intersubband absorption (15.6-26.1 meV) in m-plane AlGaN/GaN quantum wells. We find a trend of decreasing peak energy with increasing quantum well width, in agreement with theoretical expectations. However, a blue-shift…
The high-magnetic-field thermoelectric effect in nodal-line semimetals with straight nodal lines was investigated. Three-dimensional (3D) Dirac/Weyl semimetals exhibit constant thermoelectric Hall conductivity at the high-magnetic-field…
We study the quantum valley Hall effect and related domain wall modes in twisted bilayer graphene at a large commensurate angle. Due to the quantum valley and sub-valley Hall effect, a small deviation from the commensurate angle generates…
We present a scheme to realize a gain-assisted quantum heat engine (QHE) based on electromagnetically induced transparency (EIT). The QHE consists of a three-level { \Lambda}-type atomic system that interacts with two thermal reservoirs and…
The quantum anomalous Hall effect has recently been observed experimentally in thin films of Cr doped (Bi,Sb)$_2$Te$_3$ at a low temperature ($\sim$ 30mK). In this work, we propose realizing the quantum anomalous Hall effect in more…
The ability to tune the Fermi level of semiconductors is at the heart of modern electronics. Here, we demonstrate that persistent photoconductivity (PPC) enables tuning of carrier density, conductivity type, and, consequently, the valley…
We develop a temperature dependent empirical pseudopotential theory to study the electronic and optical properties of self-assembled quantum dots (QDs) at finite temperature. The theory takes the effects of both lattice expansion and…
In the pursuit of room temperature quantum hardware, our study introduces a gate voltage tunable quantum wire within a tri-gated n-type junctionless MOSFET. The application of gate voltage alters the parabolic potential well of the…
We considered intersubband electron transitions in an array of one-dimensional chains of spherical quantum dots in the GaAs/Al$_{x}$Ga$_{1-x}$As semiconductor system. The absorption coefficient caused by these transitions was calculated…
The recent discovery of fractional quantum anomalous Hall (FQAH) states - fractional quantum Hall (FQH) states realized without an external magnetic field - in twisted transition-metal dichalcogenide (TMD) bilayers represents a significant…
We calculate, as a function of temperature and conduction band electron density, the optical absorption of a weakly n-doped, idealized semiconductor quantum well. In particular, we focus on the absorption band due to the formation of a…
In the past 50 years, the high gain in quantum efficiency of photoconductors is often explained by a widely accepted theory in which the photogain is proportional to the minority carrier lifetime and inversely proportional to the carrier…
A photonic transistor that can switch or amplify an optical signal with a single gate photon requires strong non-linear interaction at the single-photon level. Circuit quantum electrodynamics provides great flexibility to generate such an…
Quantum wire superlattices (1D) realized by controlled dislocation slipping in quantum well superlattices (2D) (atomic saw method) have already shown magnetophonon oscillations. This effect has been used to investigate the electronic…
Electron-hole recollisions are induced by resonantly injecting excitons with a near-IR laser at frequency $f_{\text{NIR}}$ into quantum wells driven by a ~10 kV/cm field oscillating at $f_{\text{THz}} = 0.57$ THz. At $T=12$ K, up to 18…
We present a study of the effect of an electric field on the binding energy of a shallow hydrogenic impurity in GaAs/Ga_{1-x}Al_{x}As quantum well wires. The wire is considered to be of length L and radius R and the electric field F is…
Thanks to intrinsically short electronic relaxation on the ps time scale, III-V semiconductor unipolar devices are ideal candidates for ultrahigh-speed operation at mid-infrared frequencies. In this work, antenna-coupled, GaAs-based multi…
We consider theoretically the formation and stability of quasi-one dimensional many-body excitons in GaAs quantum wire structures under external photoexcitation conditions by solving the dynamically screened Bethe-Salpeter equation for…