We report quantum interference effects in InAs semiconductor nanowires strongly coupled to superconducting electrodes. In the normal state, universal conductance fluctuations are investigated as a function of magnetic field, temperature, bias and gate voltage. The results are found to be in good agreement with theoretical predictions for weakly disordered one-dimensional conductors. In the superconducting state, the fluctuation amplitude is enhanced by a factor up to ~ 1.6, which is attributed to a doubling of charge transport via Andreev reflection. At a temperature of 4.2 K, well above the Thouless temperature, conductance fluctuations are almost entirely suppressed, and the nanowire conductance exhibits anomalous quantization in steps of e^{2}/h.
@article{arxiv.0712.4298,
title = {Quantum Interference Effects in InAs Semiconductor Nanowires},
author = {Yong-Joo Doh and Aarnoud L. Roest and Erik P. A. M. Bakkers and Silvano De Franceschi and Leo P. Kouwenhoven},
journal= {arXiv preprint arXiv:0712.4298},
year = {2020}
}