Electron resonant tunneling through InAs/GaAs quantum dots embedded in a Schottky diode with an AlAs insertion layer

Jie Sun; Peng Jin; Chang Zhao; Like Yu; Xiaoling Ye; Bo Xu; Yonghai Chen; Zhanguo Wang

Electron resonant tunneling through InAs/GaAs quantum dots embedded in a Schottky diode with an AlAs insertion layer

Mesoscale and Nanoscale Physics 2007-12-07 v1

Authors: Jie Sun , Peng Jin , Chang Zhao , Like Yu , Xiaoling Ye , Bo Xu , Yonghai Chen , Zhanguo Wang

Abstract

Molecular beam epitaxy is employed to manufacture self-assembled InAs/GaAs quantum dot Schottky resonant tunneling diodes. By virtue of a thin AlAs insertion barrier, the thermal current is effectively reduced and electron resonant tunneling through quantum dots under both forward and reverse biased conditions is observed at relatively high temperature of 77K. The ground states of quantum dots are found to be at ~0.19eV below the conduction band of GaAs matrix. The theoretical computations are in conformity with experimental data.

Keywords

resonant tunneling quantum dots InAs/GaAs Schottky diode AlAs insertion layer molecular beam epitaxy

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@article{arxiv.0712.0980,
  title  = {Electron resonant tunneling through InAs/GaAs quantum dots embedded in a Schottky diode with an AlAs insertion layer},
  author = {Jie Sun and Peng Jin and Chang Zhao and Like Yu and Xiaoling Ye and Bo Xu and Yonghai Chen and Zhanguo Wang},
  journal= {arXiv preprint arXiv:0712.0980},
  year   = {2007}
}

Electron resonant tunneling through InAs/GaAs quantum dots embedded in a Schottky diode with an AlAs insertion layer

Abstract

Keywords

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