Tuning the onset voltage of resonant tunneling through InAs quantum dots by growth parameters

I. Hapke-Wurst; U. Zeitler; U. F. Keyser; K. Pierz; Z. Ma; R. J. Haug

doi:10.1063/1.1555712

Tuning the onset voltage of resonant tunneling through InAs quantum dots by growth parameters

Mesoscale and Nanoscale Physics 2009-11-07 v1

Authors: I. Hapke-Wurst , U. Zeitler , U. F. Keyser , K. Pierz , Z. Ma , R. J. Haug

View on arXiv ↗ PDF ↗ DOI ↗

Abstract

We investigated the size dependence of the ground state energy in self-assembled InAs quantum dots embedded in resonant tunneling diodes. Individual current steps observed in the current-voltage characteristics are attributed to resonant single-electron tunneling via the ground state of individual InAs quantum dots. The onset voltage of the first step observed is shown to decrease systematically from 200 mV to 0 with increasing InAs coverage. We relate this to a coverage-dependent size of InAs dots grown on AlAs. The results are confirmed by atomic force micrographs and photoluminescence experiments on reference samples.

Keywords

InAs quantum dots resonant tunneling onset voltage growth parameters self-assembled

Cite

@article{arxiv.cond-mat/0210375,
  title  = {Tuning the onset voltage of resonant tunneling through InAs quantum dots by growth parameters},
  author = {I. Hapke-Wurst and U. Zeitler and U. F. Keyser and K. Pierz and Z. Ma and R. J. Haug},
  journal= {arXiv preprint arXiv:cond-mat/0210375},
  year   = {2009}
}

Comments

3 pages, 3 figures

Tuning the onset voltage of resonant tunneling through InAs quantum dots by growth parameters

Abstract

Keywords

Cite

Comments

Related papers