Related papers: Interaction Effects in Conductivity of a Two-Valle…
Two-dimensional electron or hole systems in semiconductors offer the unique opportunity to investigate the physics of strongly interacting fermions. We have measured the 1/f resistance noise of two-dimensional hole systems in high mobility…
Materials able to rapidly switch between thermally conductive states by external stimuli such as electric or magnetic fields can be used as all-solid-state thermal switches and open a myriad of applications in heat management, power…
We consider the correction to conductivity of a 2D electron gas due to electron-electron interaction in the parallel magnetic field at arbitrary relation between temperature and the elastic mean free time. The correction exhibits…
FeSi is a curious example of a $d$-electron system that manifests many of the same phenomena associated with $f$-electron Kondo insulators, including conducting surface states with potentially non-trivial topology. Here we investigate the…
We present here a simple qualitative model that interpolates between the high and low temperature properties of quasi-1D conductors. At high temperatures we argue that transport is governed by inelastic scattering whereas at low…
Two-dimensional (2D) semiconductors, such as the transition metal dichalcogenides, have demonstrated tremendous promise for the development of highly tunable quantum devices. Realizing this potential requires low-resistance electrical…
Introduction of a Josephson field effect transistor (JoFET) concept sparked active research on proximity effects in semiconductors. Induced superconductivity and electrostatic control of critical current has been demonstrated in…
We study magnetic, transport and thermodynamic properties of the half-filled two-dimensional ($2D$) Hubbard model with layered distributed repulsive interactions using unbiased finite temperature quantum Monte Carlo simulations.…
We investigate the influence of electron-electron interactions on the conductance of two-dimensional disordered spinless electrons. By using an efficient numerical method which is based on exact diagonalization in a truncated basis of…
Atomically thin semiconducting MoS2 is of great interest for high-performance flexible electronic and optoelectronic devices. Initial measurements using back-gated field-effect transistor (FET) structures on SiO2 yielded mobility of 1-50…
We report the realization of field-effect transistors (FETs) made with chemically synthesized multilayer 2D crystal semiconductor MoS2. Electrical properties such as the FET mobility, subthreshold swing, on/off ratio, and contact resistance…
We report on transport characteristics of field effect two-dimensional electron gases (2DEG) in 24 nm wide indium arsenide surface quantum wells. High quality single-subband magnetotransport with clear quantized integer quantum Hall…
For the first time, n-type few-layer MoS2 field-effect transistors with graphene/Ti as the hetero-contacts have been fabricated, showing more than 160 mA/mm drain current at 1 {\mu}m gate length with an on-off current ratio of 107. The…
We consider the pairing induced in a strictly 2D electron gas (2DEG) by a proximate insulating film with polarizable localized excitations. Within a model of interacting 2D electrons and localized two-level systems, we calculate the…
We present the microscopic Fermi liquid theory for magnetic properties and transport phenomena in interacting electron systems without inversion symmetry both in the normal state and in the superconducting state. Our argument is mainly…
We find the current voltage characteristics of a 2DEG-S interface in magnetic field taking into account the surface roughness. Typically in experiments $L/2R_c\gtrsim 3$, where $L$ is the surface length and $R_c$ is the cyclotron radius.…
Over the past few years, there has been a growing interest in layered transition metal dichalcogenides (TMD) such as molybdenum disulfide (MoS2). Most studies so far have focused on the electronic and optoelectronic properties of…
On a high mobility two-dimensional hole gas (2DHG) in a GaAs/GaAlAs heterostructure we study the interaction correction to the Drude conductivity in the ballistic regime, $k_BT\tau /\hbar $ $>1$. It is shown that the 'metallic' behaviour of…
We present an electrical transport study of the 2-dimensional (2D) organic conductor tau-(P-(S,S)-DMEDT-TTF)_2(AuBr)_2(AuBr_2)_y (y = 0.75) at low temperatures and high magnetic fields. The inter-plane resistivity rho_zz increases with…
We have used a simple, analytically solvable model to analyze the characteristic s of dual-gate metal-oxide-semiconductor field-effect transistors (MOSFETs) with 10-nm-scale channel length L. The model assumes ballistic dynamics of 2D…