English

Interface-mediated pairing in field effect devices

Strongly Correlated Electrons 2007-05-23 v3 Superconductivity

Abstract

We consider the pairing induced in a strictly 2D electron gas (2DEG) by a proximate insulating film with polarizable localized excitations. Within a model of interacting 2D electrons and localized two-level systems, we calculate the critical temperature TcT_c as a function of applied voltage and for different materials properties. Assuming that a sufficient carrier density can be induced in a field-gated device, we argue that superconductivity may be observable in such systems. TcT_c is found to be a nonmonotonic function of both electric field and the excitation energy of the two-level systems.

Keywords

Cite

@article{arxiv.cond-mat/0402624,
  title  = {Interface-mediated pairing in field effect devices},
  author = {V. Koerting and Qingshan Yuan and P. J. Hirschfeld and T. Kopp and J. Mannhart},
  journal= {arXiv preprint arXiv:cond-mat/0402624},
  year   = {2007}
}

Comments

11 pages, 11 figures, text and figures updated to published version