Related papers: Interaction Effects in Conductivity of a Two-Valle…
We present the results on the anomalous 2D transport behavior by employing Drude-Boltzmann transport theory and taking into account the realistic charge impurity scattering effects. Our results show quantitative agreement with the existing…
We present a model that explains two phenomena, recently observed in high-mobility Si-MOS structures: (i) the strong enhancement of metallic conduction at low temperatures, T<2 K, and (ii) the occurrence of the metal-insulator transition in…
Reducing the contact resistance of field-effect transistors based on two-dimensional materials is one of the key improvements required to enable the integration of such transistors in an advanced semiconductor manufacturing process.…
We derive an analytical expression for the longitudinal magnetoconductivity $\sigma_{zz}$ in layered conductors in presence of a quantizing magnetic field perpendicular to the layers and for short-range in-plane impurity scattering in frame…
The interaction effects in ultracold Fermi gases with SU($N$) symmetry are studied non-perturbatively in half-filled one-dimensional lattices by employing quantum Monte Carlo simulations.We find that as $N$ increases, weak and strong…
It has been puzzling that the resistivity of high mobility two-dimensional(2D) carrier systems in semiconductors with low carrier density often exhibits a large increase followed by a decrease when the temperature ($T$) is raised above a…
We study quantum corrections to conductivity in a 2D system with a smooth random potential and strong spin-orbit splitting of the spectrum. We show that the interference correction is positive and down to the very low temperature can exceed…
We report a microwave study of the longitudinal and transverse transport properties of the quasi-one-dimensional organic conductor (TMTSF)$_2$PF$_6$ in its normal phase. The contactless technique have provided a direct measurement of the…
We have measured the weak localization magnetoresistance in (001)-oriented Si MOS structures with a wide range of mobilities. For the quantitative analysis of the data, we have extended the theory of weak-localization corrections in the…
In two-dimensional multivalley semiconductors, at low doping, even a moderate electron-electron interaction enhances the response to any perturbation inducing a valley polarization. If the valley polarization is due to the electron-phonon…
The effects of electronic correlations and orbital degeneracy on thermoelectric properties are studied within the context of multi-orbital Hubbard models on different lattices. We use dynamical mean field theory with iterative perturbation…
Negative magnetoresistance is one of the manifestations of the chiral anomaly in Weyl semimetals. The magneto-optical conductivity also shows transitions between Landau levels that are not spaced as in an ordinary electron gas. How are such…
We report on studies of the magnetoresistance in strongly correlated 2D electron system in Si in the critical regime, in the close vicinity of the 2D metal-insulator transition. We performed self-consistent comparison of our data with…
Understanding the operation mode of a two-dimensional (2D) material-based field-effect transistor (FET) is one of the most essential issues in the study of electronics and physics. The existing Schottky barrier-FET model for devices with…
We present a functional-based approach to compute thermal expectation values for actions expressed in the $G-\Sigma$ formalism, applicable to any time sequence ordering. Utilizing this framework, we analyze the linear response to an…
Electron-electron interactions mediated by impurities are studied in several high-mobility two-dimensional (electron and hole) systems where the parameter $k_BT\tau /\hbar $ changes from 0.1 to 10 ($\tau$ is the momentum relaxation time).…
We explore multiband effects on d-wave superconducting instabilities driven by electron-electron interactions. Our models on the two-dimensional square lattice consist of a main band with an extended Fermi surface and predominant weight…
We argue that the magnetic susceptibility data, Refs. 1-3, for the low-density two-dimensional (2D) silicon-based electron gas indicate that magnetically active electrons are localised in spin-droplets. The droplets exist in both the…
We report on the fabrication of field-effect transistors based on single and bilayers of the semiconductor WS2 and the investigation of their electronic transport properties. We find that the doping level strongly depends on the device…
We present an overview of recent studies of the charge transport in the field effect transistors on the surface of single crystals of organic low-molecular-weight materials. We first discuss in detail the technological progress that has…