Related papers: Quantum scaling in nano-transistors
In fluids and plasmas with zonal flow reversed shear, a peculiar kind of transport barrier appears in the shearless region, one that is associated with a proper route of transition to chaos. Using a symplectic nontwist maps, which model…
We present a scaling description of a metal-insulator transition in two-dimensional electron systems that is driven by a vanishing compressibility rather than a vanishing diffusion coefficient. A small set of basic assumptions leads to a…
General quantum restrictions on the noise performance of linear transistor amplifiers are used to identify the region in parameter space where the quantum-limited performance is achievable and to construct a practical procedure for…
Weak topological insulators have an even number of Dirac cones in their surface spectrum and are thought to be unstable to disorder, which leads to an insulating surface. Here we argue that the presence of disorder alone will not localize…
Motivated by the overwhelming evidence some type of quantum criticality underlies the power-law for the optical conductivity and $T-$linear resistivity in the cuprates, we demonstrate here how a scale-invariant or unparticle sector can lead…
Continued improvement of heat control in mesoscopic conductors brings novel tools for probing strongly correlated electron phenomena. Motivated by these advances, we comprehensively study transport due to a temperature bias in a quantum…
We report the magnetoresistance characteristics of one-dimensional electrons confined in a single InAs quantum well sandwiched between AlSb barriers. As a result of a novel nanofabrication scheme that utilizes a 3nm-shallow wet chemical…
A method is proposed for studying wave and particle transport in disordered waveguide systems of dimension higher than unity by means of exact one-dimensionalization of the dynamic equations in the mode representation. As a particular case,…
Nanoscale channels realized at the conducting interface between LaAlO$_{3}$ and SrTiO$_{3}$ provide a perfect playground to explore the effect of dimensionality on the electronic properties of complex oxides. Here we compare the electric…
Several low-dimensional systems show a crossover from diffusive to ballistic heat transport when system size is decreased. Although there is some phenomenological understanding of this crossover phenomena in the coarse grained level, a…
We have fabricated carbon nanotube (CN) field-effect transistors with multiple, individually addressable gate segments. The devices exhibit markedly different transistor characteristics when switched using gate segments controlling the…
InGaAs gate-all-around nanowire MOSFETs with channel length down to 50nm have been experimentally demonstrated by top-down approach. The nanowire size-dependent transport properties have been systematically investigated. It is found that…
We investigate scaling phenomena at first-order quantum transitions, when the boundary conditions favor one of the two phases. We show that the corresponding finite-size scaling behavior, arising from the interplay between the driving…
Nanoscale size-effects drastically alter the fundamental properties of semiconductors. Here, we investigate the dominant role of quantum confinement in the field-effect device properties of free-standing InAs nanomembranes with varied…
Carbon nanotube field-effect transistors with structures and properties near the scaling limit with short (down to 50 nm) channels, self aligned geometries, palladium electrodes with low contact resistance and high-k dielectric gate…
We report low-temperature electrical transport studies of molecule-scale silicon nanowires. Individual nanowires exhibit well-defined Coulomb blockade oscillations characteristic of charge addition to a single nanostructure with length…
We investigate by low-temperature transport experiments the sub-threshold behavior of triple-gate silicon field-effect transistors. These three-dimensional nano-scale devices consist of a lithographically defined silicon nanowire surrounded…
For a broad range of electron densities $n$ and temperatures $T$, the in-plane magnetoconductivity of the two-dimensional system of electrons in silicon MOSFET's can be scaled onto a universal curve with a single parameter…
We study statistical properties of turbulent inverse cascades in a class of nonlinear models describing a scalar field transported by a two-dimensional incompressible flow. The class is characterized by a linear relation between the…
We analyze a one-dimensional quantum model with off-diagonal disorder, consisting of a sequence of potential energy barriers whose width is a random variable either uniformly or "half-normally" distributed, subjected to an external electric…