Related papers: Quantum scaling in nano-transistors
We study the scaling properties of the quantum ``projected'' SO(5) model in three dimensions by means of a highly accurate Quantum-Monte-Carlo analysis. Within the parameter regime studied (temperature and system size), we show that the…
We study the transport properties of ultrathin disordered nanowires in the neighborhood of the superconductor-metal quantum phase transition. To this end we combine numerical calculations with analytical strong-disorder renormalization…
Transport properties play a crucial role in defining materials as insulators, metals, or superconductors. A fundamental parameter in this regard is the Drude weight, which quantify the ballistic transport of charge carriers. In this work,…
In this letter we study the Hall conductivity in holographic models where translational invariance is broken by a lattice. We show that generic holographic theories will display a different temperature dependence in the Hall angle as to the…
The transport of atoms is experimentally studied in a transistor-like triple-well potential consisting of a narrow gate well surrounded by source and drain wells. Atoms are initially loaded into the source well with pre-determined…
The simulation of charge transport in ultra-scaled electronic devices requires the knowledge of the atomic configuration and the associated potential. Such "atomistic" device simulation is most commonly handled using a tight-binding…
A 20 band sp3d5s* spin-orbit-coupled, semi-empirical, atomistic tight-binding (TB) model is used with a semi-classical, ballistic, field-effect-transistor (FET) model, to theoretically examine the bandstructure carrier velocity and…
In this article, we combine the modified electrostatics of a one-dimensional transistor structure with a quantum kinetic formulation of Coulomb interaction and nonequilibrium transport. A multi-configurational self-consistent Green's…
Thin-film transistors (TFTs) represent a wide-spread tool to determine the charge-carrier mobility of materials. Mobilities and further transistor parameters like contact resistances are commonly extracted from the electrical…
Low-dimensional materials such as layered semiconductors or carbon nanotubes (CNTs) have been attracting increasing attention in the last decades due to their inherent scaling properties, which become fundamental to sustain the scaling in…
Charge transport in amorphous semiconductors is considerably more complicated than process in crystalline materials due to abundant localized states. In addition to device-scale characterization, spatially resolved measurements are…
Near-wall turbulent velocities in turbulent channel flows are decomposed into small-scale and large-scale components at $y^+<100$ by improving the predictive inner-outer model of Baars et al. [Phys. Rev. Fluids 1, 054406 (2016)], where…
We study the charge transport across a band-tuned metal-insulator transition in two dimensions. For high temperatures $T$ and chemical potentials $\mu$ far from the transition point, conduction is ballistic and the resistance $R(T)$…
The description of electron-electron interactions in transport problems is both analytically and numerically difficult. Here we show that a much simpler description of electron transport in the presence of interactions can be achieved in…
We performed a comprehensive scaling study of Schottky barrier carbon nanotube transistors using self-consistent, atomistic scale simulations. We restrict our attention to Schottky barrier carbon nanotube FETs whose metal source/drain is…
We report an experimental study of one-dimensional (1D) electronic transport in an InSb semiconducting nanowire. Three bottom gates are used to locally deplete the nanowire creating a ballistic quantum point contact with only a few…
A quantum phase transition is an unequivocal signature of strongly correlated many-body physics. Signatures of such phenomena are yet to be observed in ballistic transport through quantum wires. Recent developments in quantum wires have…
The Landauer formula for quantum conductance, based on the modern paradigm: "conduction is transmission", is generalized to samples of macroscopic size. Two regimes of electrical conduction, namely diffusive and ballistic ones, are studied.…
In the present work, we have investigated the performances of L shaped Vertical broken bandgapheterostructureInSb InAsn-channel tunnel field effect transistors TFETs of 4 nm thin channel structures with the gate lengths of 20nm. We have…
Experimental studies of magnetoresistance in thin superconducting strips subject to a perpendicular magnetic field B exhibit a multitude of transitions, from superconductor to insulator and vice versa alternately. Motivated by this…