Related papers: Quantum scaling in nano-transistors
Understanding why Transformers perform so well remains challenging due to their non-convex optimization landscape. In this work, we analyze a shallow Transformer with $m$ independent heads trained by projected gradient descent in the kernel…
It is expected that the introduction of a viscosity gradient across a nanofluidic system will drastically vary its current-voltage response, $i-V$. However, to date, there is no self-consistent theoretical model that can be used to fully…
We investigate quantum transport in aligned carbon nanotube (CNT) fibers fabricated via solution spinning, focusing on the roles of structural dimensionality and quantum interference effects. The fibers exhibit metallic behavior at high…
A consistent and widely accepted physical basis for interpretation of charge transport in amorphous oxide semiconductor (AOS) field-effect transistors (FETs), and more generally device physics, has been hampered by uncertainties in…
Filamentary resistive switching devices are not only considered as promising building blocks for brain-inspired computing architectures, but they also realize an unprecedented operation regime, where the active device volume reaches truly…
We study resonant tunneling through a single-level quantum dot in the presence of strong Coulomb repulsion beyond the perturbative regime. The level is either spin-degenerate or can be split by a magnetic field. We, furthermore, discuss the…
The scaling behaviors of graphene nanoribbon (GNR) Schottky barrier field-effect transistors (SBFETs) are studied by solving the non-equilibrium Green's function (NEGF) transport equation in an atomistic basis set self-consistently with a…
We report two examples of transport phenomena based on sharp features in the effective density of states of molecular-scale transistors: Kondo physics in C$_{60}$-based devices, and gate-modulated negative differential resistance (NDR) in…
The scaling of Si transistor technology has resulted in a remarkable improvement in the performance of integrated circuits over the last decades. However, scaled transistors also require reduced electrical interconnect dimensions, which…
A domain wall separating two oppositely magnetized regions in a ferromagnetic semiconductor exhibits, under appropriate conditions, strongly nonlinear I-V characteristics similar to those of a p-n diode. We study these characteristics as…
We analytically study a system of spinless fermions driven at the boundary with an oscillating chemical potential. Various transport regimes can be observed: at zero driving frequency the particle current through the system is independent…
Low-dimensional metallic transport is at the heart of modern high-performance transistors. While the best devices are currently based on III-V heterojunction quantum-well channels, we demonstrate that much greater performance gains reside…
We have presented a compact MOSFET model, which allows us to describe the I-V characteristics of irradiated long-channel and short-channel transistors in all operation modes at different measurement temperatures and interface trap…
Commonly, thermal transport properties of one-dimensional systems are found to be anomalous. Here, we perform a numerical and theoretical study of the $\beta$-FPUT chain, considered a prototypical model for one-dimensional anharmonic…
Experimental studies of the transitions from a primary quantum Hall (QH) liquid at filling factor 1/k (with k an odd integer) to the insulator have indicated a ``quantized Hall insulator'' (QHI) behavior: while the longitudinal resistivity…
We implement self-consistent microscopic calculations in order to describe out-of-equilibrium non-local transport in normal metal-superconductor-normal metal hybrid structures in the presence of a magnetic field and for arbitrary interface…
We analyze a one dimensional quantum model with off-diagonal disorder, consisting of a sequence of potential energy barriers whose width is a random variable either uniformly or normally distributed. We investigate how the disorder and the…
Capacitance-Voltage (C-V) & Ballistic Current- Voltage (I-V) characteristics of Double Gate (DG) Silicon-on- Insulator (SOI) Flexible FETs having sub 35nm dimensions are obtained by self-consistent method using coupled Schrodinger- Poisson…
The permeability is one of the most fundamental transport properties in soft matter physics, material engineering, and nanofluidics. Here we report by means of Langevin simulations of ideal penetrants in a nanoscale membrane made of a fixed…
A simulation methodology for ultra-scaled InAs quantum well field effect transistors (QWFETs) is presented and used to provide design guidelines and a path to improve device performance. A multiscale modeling approach is adopted, where…