Related papers: Quantum scaling in nano-transistors
In order to continue to improve integrated circuit performance and functionality, scaled transistors with short channel lengths and low thickness are needed. But the further scaling of silicon-based devices and the development of…
It is shown from computer simulations that the current-voltage ($I$-$V$) characteristics for the two-dimensional XY model with resistively-shunted Josephson junction dynamics and Monte Carlo dynamics obeys a finite-size scaling form from…
The resistivity scaling of metals is a crucial limiting factor for further downscaling of interconnects in nanoelectronic devices that affects signal delay, heat production, and energy consumption. Here, we generalize a commonly considered…
We demonstrate switching behavior and quantized conductance at room temperature in percolating films of nanoparticles. Our experiments and complementary simulations show that switching and quantization result from formation of atomic scale…
Scaling field-effect transistors (FETs) into the sub-10-nm regime fundamentally alters the transport mechanism, challenging long-standing design rules. This study investigates monolayer TMD FETs with channel lengths from 12 nm to 3 nm,…
We study the dissipation physics of one dimensional mesoscopic superconducting quantum interference device array by using the field-theoretical renormalization group method. We observe length scale dependent superconductor-insulator quantum…
We report on unique electronic properties in Fe-SiO2 nanocomposite thin films in the vicinity of the percolation threshold. The electronic transport is dominated by quantum corrections to the metallic conduction of the Infinite Cluster…
Quantum transport is the study of the motion of electrons through nano-scale structures small enough that quantum effects are important. In this contribution I review recent theoretical proposals to use the techniques of quantum feedback…
The radial confining potential in a semiconductor nanowire plays a key role in determining its quantum transport properties. Previous reports have shown that an axial magnetic field induces flux-periodic conductance oscillations when the…
Macroscopic assemblies of one- and two-dimensional materials promise to translate nanoscale electronic properties into device-scale performance, yet the microscopic principles governing charge transport in such networks remain unresolved.…
We briefly explain the consistency conditions imposed on the effective holographic theories, which are parameterized by two real exponents $(\gamma,\delta)$ that control the IR dynamics. The general scaling of DC resistivity with…
In one and two dimensions, transport coefficients may diverge in the thermodynamic limit due to long--time correlation of the corresponding currents. The effective asymptotic behaviour is addressed with reference to the problem of heat…
We measure hole transport in poly(3-hexylthiophene) field effect transistors with channel lengths from 3 $\mu$m down to 200 nm, from room temperature down to 10 K. Near room temperature effective mobilities inferred from linear regime…
We show that many of the unusual properties of the one-dimensional random quantum Ising model are shared also by dilute quantum Ising systems in the vicinity of a certain quantum transition in {\em any} dimension $d > 1$. Thus, while these…
We describe two different modes for electronically detecting an adsorbed molecule using a nanoscale transistor. The attachment of an ionic molecular target shifts the threshold voltage through modulation of the depletion layer…
We have recently calculated exact non-equilibrium quantum transport properties through a point contact in a Luttinger liquid. Using a particular quasiparticle basis of the Hilbert space dictated by integrability, we here compute explicitly…
A semi-analytical model for studying thermal transport at the nanoscale, able to accurately describe both the effect of out of equilibrium transport and the thermal transfer at interfaces, is presented. Our approach is based on the…
We report the transport characteristics of both electrons and holes through narrow constricted crystalline Si "wall-like" long-channels that were surrounded by a thermally grown SiO2 layer. Importantly, as a result of the existence of fixed…
We present a comprehensive first-principles study of the ballistic transport properties of low dimensional nanostructures such as linear chains of atoms (Al, C) and carbon nanotubes in presence of defects. A novel approach is introduced…
We report on a striking departure from the canonical step sequence of quantized conductance in a ballistic, quasi-one-dimensional metallic channel. Ideally, in such a structure, each sub-band population contributes its Landauer conductance…