Related papers: Achieving High Curie Temperature in (Ga,Mn)As
Indium incorporation and surface morphology of InAlN layers grown on (0001)GaN by plasma-assisted molecular beam epitaxy were investigated as a function of the impinging In flux and the substrate temperature in the 450-610$^{\circ}$C range.…
2H-TaS$_2$ few layers have been grown epitaxially onto GaN(0001). A high substrate growth temperature of 825$^{\circ}$C induces best structural properties of the overlayer, as revealed by in-situ electron diffraction (RHEED and LEED). The…
Mn doped GaAs thin films were grown using molecular beam epitaxy at high and low substrate temperatures. The elemental concentration depth profiles in the thin films were determined by using Auger electron spectroscopy combined with ion…
We report an exchange bias of more than $2700\,$Oe at room temperature in MnN/CoFe bilayers after high-temperature annealing. We studied the dependence of exchange bias on the annealing temperature for different MnN thicknesses in detail…
The present study elucidates the correlation between the structural and optical properties of GaN nanowires grown on Si(111) substrate by plasma assisted molecular beam epitaxy (PA-MBE) technique under various growth conditions. GaN NWs…
Based on ab initio calculations of Ga_{1-x}Mn_xN_yAs_{1-y} and Ga_{1-x}Mn_xC_yAs_{1-y}, we propose a new codoping method to enhance the Curie temperature T_c of diluted magnetic semiconductors. The solubility of Mn can be increased up to…
Kerr rotation and Superconducting QUantum Interference Device (SQUID) magnetometry measurements were performed on ultrathin (Ga$_{0.95}$Mn$_{0.05}$)As layers. The thinner layers (below 250 \AA) exhibit magnetic properties different than…
We explore two possible ways to enhance the critical temperature $T_c$ in the dilute magnetic semiconductor Mn$_{0.08}$Ga$_{0.92}$As. Within the context of the double-exchange and RKKY pictures, the ternary alloys…
Mn concentration depth profiles in Mn-doped GaAs thin films grown at substrate temperatures of 580 and 250 {\deg}C using various Mn cell temperatures have been investigated with dynamic secondary ion mass spectrometry and Auger electron…
The process of annealing of a CdTe:Cl ingot during its cooling after growth was studied. The annealing was performed in two stages: a high-temperature stage, with an approximate equality of chlorine and cadmium vacancy concentrations…
We have prepared the dilute magnetic semiconductor (DMS) InMnAs with different Mn concentrations by ion implantation and pulsed laser melting. The Curie temperature of the In1-xMnxAs epilayer depends on the Mn concentration x, reaching 82 K…
A new scenario of the mechanism of intriguing ferromagnetic properties in Mn-doped magnetic semiconductor (Ga,Mn)As is examined in detail. We find that magnetic features seen in zero-field cooled and field cooled magnetizations are not…
Nanoscale layered ferromagnets have demonstrated fascinating two-dimensional magnetism down to atomic layers, providing a peculiar playground of spin orders for investigating fundamental physics and spintronic applications. However,…
The magnetic, transport, and structural properties of (Ga,Cr)As are reported. Zincblende Ga$_{1-x}$Cr$_{x}$As was grown by low-temperature molecular beam epitaxy (MBE). At low concentrations, x$\sim$0.1, the materials exhibit unusual…
This study investigates the influence of various growth parameters on normal-state resistivity and superconducting transition temperature Tc of granular aluminum films. Specifically, we focus on the effects of oxygen flow and aluminum…
We have studied the evolution of the magnetic, electronic, and structural properties of annealed epilayers of Ga1-xMnxAs grown by low temperature molecular beam epitaxy. Annealing at the optimal temperature of 250 C for less than 2 hours…
We present a combined theoretical and experimental study of the ferromagnetic semiconductor (Ga,Mn)As which explains the remarkably large changes observed on low temperature annealing. Careful control of the annealing conditions allows us…
Growth of GaAs and InGaAs nanowires by the group-III assisted Molecular Beam Epitaxy growth method is studied in dependence of growth temperature, with the objective of maximizing the indium incorporation. Nanowire growth was achieved for…
We report the results of a detailed study of the structural, magnetic and magnetotransport properties of as-grown and annealed Ga0.91Mn0.09As thin films grown on (311)A and (311)B GaAs substrates. The high Curie temperature and hole density…
We have studied the electronic structure of hexagonal MnAs, as epitaxial continuous film on GaAs(001) and as nanocrystals embedded in GaAs, by Mn 2p core-level photoemission spectroscopy. Configuration-interaction analyses based on a…