English

T_c-Enhanced Codoping Method for GaAs-based Dilute Magnetic Semiconductors

Materials Science 2008-01-15 v1 Disordered Systems and Neural Networks

Abstract

Based on ab initio calculations of Ga_{1-x}Mn_xN_yAs_{1-y} and Ga_{1-x}Mn_xC_yAs_{1-y}, we propose a new codoping method to enhance the Curie temperature T_c of diluted magnetic semiconductors. The solubility of Mn can be increased up to high concentration by the codoping of N or C to reduce the lattice and volume expansion caused by Mn doping. It is found that the impurity band of the majority spin is strongly broadened and pushed up into the higher energy region due to the strong p-d hybridization caused by the codoping, and the T_c becomes higher than the room temperature at x>0.06.

Keywords

Cite

@article{arxiv.cond-mat/0311131,
  title  = {T_c-Enhanced Codoping Method for GaAs-based Dilute Magnetic Semiconductors},
  author = {Van An Dinh and K. Sato and H. Katayama-Yoshida},
  journal= {arXiv preprint arXiv:cond-mat/0311131},
  year   = {2008}
}

Comments

4 pages, 4 figures