Related papers: Achieving High Curie Temperature in (Ga,Mn)As
Ultrathin 3d-4f synthetic ferrimagnets with perpendicular magnetic anisotropy (PMA) exhibit a range of intriguing magnetic phenomena, including all-optical switching of magnetization (AOS), fast current-induced domain wall motion (CIDWM),…
Single-crystals of the new ferromagnetic superconductor UCoGe have been grown. The quality of as-grown samples can be significantly improved by a heat-treatment procedure, which increases the residual resistance ratio (RRR) from ~5 to ~30.…
A comprehensive study on thermomechanical processing of pure Mg was conducted through sequential hot extrusion, hot rolling, and cold drawing operations. Three different extrusion ratios (6:1, 25:1, and 39:1) were investigated at…
The effects of Mg deficiency in MgB2 films grown by using hybrid physical-chemical vapor deposition were investigated after vacuum annealing at various temperatures. High-quality MgB2 films grown on c-cut Al2O3 substrates with different…
We demonstrate that low concentrations of a secondary magnetic phase in (Ga,Mn)As thin films can enhance the coercivity by factors up to ~100 without significantly degrading the Curie temperature or saturation magnetisation. Magnetic…
Recent realizations of intrinsic, long-range magnetic orders in two-dimensional (2D) van der Waals materials have ignited tremendous research interests. In this work, we employ the XXZ Heisenberg model and Monte Carlo simulations to study a…
A GaN film doped with 8.2 % Mn was grown by the molecular-beam-epitaxy technique. Magnetization measurements show that this highly Mn-doped GaN film exhibits ferromagnetism above room temperature. It is also revealed that the…
The influence of the growth conditions as well as the device design on the device performance of (GaIn)As/Ga(AsSb)/(GaIn)As "W"-quantum well lasers is investigated. To this purpose, the epitaxy process is scaled to full two inch substrates…
The electronic structure of diluted (Ga,Mn)As magnetic semiconductors in the presence of As-antisites and magnetic disorder is studied within the framework of the local spin density approximation. Both the chemical and magnetic disorders…
The morphology of GaN samples grown by plasma-assisted molecular beam epitaxy on Si(111) was systematically studied as a function of impinging Ga/N flux ratio and growth temperature (750-850{\deg}C).Two different growth regimes were…
We demonstrate that GaMnAs films grown with As2 have excellent structural, electrical and magnetic properties, comparable or better than similar films grown with As4. Using As2, a Curie temperature of 112K has been achieved, which is…
Intermetallic compounds R2Fe17 are perspective for applications as permanent magnets. Technologically these systems must have Curie temperature Tc much higher than room temperature and preferably have easy axis anisotropy. At the moment…
We employ dynamical mean-field theory to identify the materials properties that optimize Tc for a generalized double-exchange (DE) model. We reach the surprising conclusion that Tc achieves a maximum when the band angular momentum j equals…
We theoretically investigate disorder effects on the ferromagnetic transition ('Curie') temperature $T_c$ in dilute III$_{1-x}$Mn$_x$V magnetic semiconductors (e.g. Ga$_{1-x}$Mn$_x$As) where a small fraction ($x \approx 0.01-0.1$) of the…
The structural and magnetic properties of Mn5Ge3Cx films prepared at elevated substrate temperatures TS are investigated. In particular, films with x >= 0.5 and TS = 680 K exhibit a strongly enhanced Curie temperature TC = 440 K compared to…
In addition to the double phase transition (with the Curie temperatures T_C=300K and T_{Ct}=144K), a low-temperature anomaly in the dependence of the magnetization is observed in the bulk magnetic graphite (with an average granular size of…
We report on the chemical stability of La2/3Ca1/3MnO3 thin films. X-ray absorption spectroscopy at the Mn L-edge and O K-edge makes evident deviations from the nominally expected (2/3-1/3) Mn3+/Mn4+ ratio after the growth of thin films on…
Using ammonia as nitrogen source for molecular beam epitaxy, the GaN-based diluted magnetic semiconductor Ga1-xMnxN is successfully grown with Mn concentration up to x~6.8% and with p-type conductivity. The films have wurtzite structure…
500-nm-thick $\mathrm{In}_{x}\mathrm{Ga}_{1-x}\mathrm{N}$ layers with $x=$ 0.05-0.14 are grown using plasma-assisted molecular beam epitaxy, and their properties are assessed by a comprehensive analysis involving x-ray diffraction,…
Near the Curie temperature the anisotropy field of magnetically uniaxial L10 FePt is expected to follow the scaling law $(1-T/Tc)^\beta$ where $T$ is the temperature and $T_c$ the Curie temperature. In the literature $\beta$ values between…