Related papers: GaN/AlN Quantum Dots for Single Qubit Emitters
Quantum Dots are very attractive nanostructures from an application point of view due to their unique optical properties. Optical properties and Valence Band states character was numerically investigated from the effect of nanostructure…
We report a study of transport blockade features in a quantum dot single-electron transistor, based on an undoped AlGaAs/GaAs heterostructure. We observe suppression of transport through the ground state of the dot, as well as negative…
We present analytical and numerical investigation of spectral and transport properties of a quadruple quantum-dot (QQD) structure which is one of the popular low-dimensional systems in the context of fundamental quantum physics study,…
Photonic-based qubits and integrated photonic circuits have enabled demonstrations of quantum information processing (QIP) that promises to transform the way in which we compute and communicate. To that end, sources of…
A microscopic theory for the interaction of carriers with LO phonons is used to study the ultrafast carrier dynamics in nitride-based semiconductor quantum dots. It is shown that the efficiency of scattering processes is directly linked to…
We study the ballistic edge-channel transport in quantum wires with a magnetic quantum dot, which is formed by two different magnetic fields B^* and B_0 inside and outside the dot, respectively. We find that the electron states located near…
We consider transport through a vibrating molecular quantum dot contacted to macroscopic leads acting as charge reservoirs. In the equilibrium and nonequilibrium regime, we study the formation of a polaron-like transient state at the…
We present a unified theory of quantum phase transitions for half-filled quantum dots (QDs) coupled to gapped host bands. We augment the bands by additional weakly coupled metallic lead which allows us to analyze the system by using…
A graphene quantum dot under intense ac field and static low magnetic field is investigated. From a tight-binding perspective, applying a Fourier-Floquet transformation and renormalization process, we observe that graphene -intrinsically…
Semiconductor quantum dots have emerged as promising candidates for implementation of quantum information processing since they allow for a quantum interface between stationary spin qubits and propagating single photons. In the meanwhile,…
Electronic structure and transport characteristics of coupled CdS and ZnSe quantum dots are studied using density functional theory and non equilibrium Greens function method respectively. Our investigations show that in these novel coupled…
We studied the formation mechanism of the in-plane nuclear field in single self-assembled In$_{0.75}$Al$_{0.25}$As/Al$_{0.3}$Ga$_{0.7}$As quantum dots. The Hanle curves with an anomalously large width and hysteretic behavior at the critical…
A multiscale approach was adopted for the calculation of confined states in self-assembled semiconductor quantum dots (QDs). While results close to experimental data have been obtained with a combination of atomistic strain and…
The transport through a quantum wire exposed to two magnetic spikes in series is modeled. We demonstrate that quantum dots can be formed this way which couple to the leads via magnetic barriers. Conceptually, all quantum dot states are…
We studied orientation dependent transport in vicinal N-polar AlGaN/GaN heterostructures. We observed significant anisotropy in the current carrying charge parallel and perpendicular to the miscut direction. A quantitative estimate of the…
We study theoretically the electron states in a system of two vertically stacked quantum dots. We investigate the influence of the geometrical symmetry breaking (caused by the displacement as well as the ellipticity of the dots) on the…
A quantum dot can be used as a source of one- and two-photon states and of polarisation entangled photon pairs. The emission of such states is investigated from the point of view of frequency-resolved two-photon correlations. These follow…
Vertically stacked and coupled InAs/GaAs self-assembled quantum dots (SADs) are predicted to exhibit a strong non-parabolic dependence of the interband transition energy on the electric field, which is not encountered in single SAD…
The degree and orientation of the magnetic-field induced linear polarization of the photoluminescence from a wide range of heterostructures containing (Cd,Mn)Te quantum wells between (Cd,Mn,Mg)Te barriers has been studied as a function of…
The transport spectrum of a strongly tunnel-coupled one-electron double quantum dot electrostatically defined in a GaAs/AlGaAs heterostructure is studied. At finite source-drain-voltage we demonstrate the unambiguous identification of the…