Related papers: GaN/AlN Quantum Dots for Single Qubit Emitters
We report GaAs/AlGaAs nanowires in the one-dimensional (1D) quantum limit. The ultrathin wurtzite GaAs cores between 20-40\,nm induce large confinement energies of several tens of meV, allowing us to experimentally resolve up to four well…
We present an experimental and theoretical study of the polarized photoluminescence spectrum of single semiconductor quantum dots in various charge states. We compare our high resolution polarization sensitive spectral measurements with a…
Among recent proposals for next-generation, non-charge-based logic is the notion that a single electron can be trapped and its spin can be manipulated through the application of gate potentials. In this paper, we present numerical…
The quantum transport in a narrow channel (NC) is studied in the presence of a time-dependent delta-profile electric field. The electric field is taken to be transversely polarized, with frequency $\omega$, causing inter-subband and…
We have examined the formation mechanisms of GaN quantum dots (QDs) via annealing of Ga droplets in a nitrogen flux. We consider the temperature and substrate dependence of the size distributions of droplets and QDs, as well as the relative…
The polarization splitting of the exciton ground state in two laterally coupled quantum dots under an in-plane electric field is investigated and its effective tuning is designed. It is found that there are significant Stark effect and…
We report on the optical properties of single InAs/GaAs quantum dots emitting near the telecommunication O-band, probed via Coulomb blockade and non-resonant photoluminescence spectroscopy, in the presence of external electric and magnetic…
The prospect of using the quantum nature of light for secure communication keeps spurring the search and investigation of suitable sources of entangled-photons. Semiconductor quantum dots are arguably the most attractive. They can generate…
Scattering of carriers between spatially separated zero dimensional states has been observed in a system of self-assembled In_{0.55}Al_{0.45}As quantum dots. We believe the interdot tunneling is mediated by localized states below the…
With recent advances in strain-engineering technology of graphene and 2D materials, graphene quantum dots (QDs) defined by the strain-induced pseudo-magnetic fields (PMFs) have been of interest, with the feasibility of tunable graphene…
The nanowire-supported quantum dot (NWQD) of GaN is an unconventional nanostructure, which is extremely promising for realization of UV photonics in general, and room-temperature single photon generation, in particular. While GaN-NWQDs have…
We present an optical study of closely-spaced self-assembled InAs/GaAs quantum dots. The energy spectrum and correlations between photons subsequently emitted from a single pair provide not only clear evidence of coupling between the…
Due to their band-structure and optical properties, InAs/InP quantum dots (QDs) constitute a promising system for single-photon generation at third telecom window of silica fibers and for applications in quantum communication networks.…
We investigate the emission directionality of electronic intraband (intersubband) transitions in stacked coupled quantum dots. Using a well-established eight-band $k \cdot p$ method, we demonstrate that the minor contributions from the…
The optical properties of single InAsP/InP quantum dots are investigated by spectrally-resolved and time-resolved photoluminescence measurements as a function of excitation power. In the short-wavelength region (below 1.45 $\mu$m), the…
In this work, we propose an efficient quantum-enhanced solid-state photocell based on GaN quantum dots. We exploit the strong built-in electric field in GaN QDs and excitonic dipole-dipole coupling between adjacent QDs to break detailed…
The electronic structure of an infinite 1D array of vertically coupled InAs/GaAs strained quantum dots is calculated using an eight-band strain-dependent k-dot-p Hamiltonian. The coupled dots form a unique quantum wire structure in which…
Single semiconductor quantum dots have been widely studied within devices that can apply an electric field. In the most common system, the low energy offset between the InGaAs quantum dot and the surrounding GaAs material limits the…
Quantum state transfer from flying photons to stationary matter qubits is an important element in the realization of quantum networks. Self-assembled semiconductor quantum dots provide a promising solid-state platform hosting both single…
Carbon quantum dots (CQDs) are a promising material for electronic applications due to their easy fabrication and interesting semiconductor properties. Further, CQDs exhibit quantum confinement and charging effects, which may lead not only…