We studied orientation dependent transport in vicinal N-polar AlGaN/GaN heterostructures. We observed significant anisotropy in the current carrying charge parallel and perpendicular to the miscut direction. A quantitative estimate of the charge anisotropy was made based on gated TLM and Hall measurements. The formation of electro-statically confined one-dimensional channels is hypothesized to explain charge anisotropy. A mathematical model was used to verify that polarization charges distributed on miscut structure can create lateral one-dimensional confinement in vicinal substrates. This polarization-engineered electrostatic confinement observed is promising for new research on low-dimensional physics and devices besides providing a template for manufacturable one-dimensional devices.
@article{arxiv.1009.2537,
title = {Lateral Confinement of Electrons in Vicinal N-polar AlGaN/GaN Heterostructure},
author = {Digbijoy N. Nath and Stacia Keller and Eric Hsieh and Steven P. DenBaars and Umesh K. Mishra and Siddharth Rajan},
journal= {arXiv preprint arXiv:1009.2537},
year = {2015}
}