Unipolar Vertical Transport in GaN/AlGaN/GaN Heterostructures

D. N. Nath; P. S. Park; Z. C. Yang; S. Rajan

doi:10.1063/1.4813309

Unipolar Vertical Transport in GaN/AlGaN/GaN Heterostructures

Mesoscale and Nanoscale Physics 2013-12-12 v1 Materials Science

Authors: D. N. Nath , P. S. Park , Z. C. Yang , S. Rajan

View on arXiv ↗ PDF ↗ DOI ↗

Abstract

In this letter, we report on unipolar vertical transport characteristics in c-plane GaN/AlGaN/GaN heterostructures. Vertical current in heterostructures with random alloy barriers was found to be independent of dislocation density and heterostructure barrier height, and significantly higher than theoretical estimates. Percolation-based transport due to random alloy fluctuations in the ternary AlGaN is suggested as the dominant transport mechanism, and confirmed through experiments showing that non-random or digital AlGaN alloys and polarization-engineered binary GaN barriers can eliminate percolation transport and reduce leakage significantly. The understanding of vertical transport and methods for effective control proposed here will greatly impact III-nitride unipolar vertical devices.

Keywords

unipolar vertical transport GaN/AlGaN/GaN heterostructures random alloy fluctuations percolation transport leakage current III-nitride devices

Cite

@article{arxiv.1302.3942,
  title  = {Unipolar Vertical Transport in GaN/AlGaN/GaN Heterostructures},
  author = {D. N. Nath and P. S. Park and Z. C. Yang and S. Rajan},
  journal= {arXiv preprint arXiv:1302.3942},
  year   = {2013}
}

Unipolar Vertical Transport in GaN/AlGaN/GaN Heterostructures

Abstract

Keywords

Cite

Related papers