Anisotropic charge transport in non-polar GaN QW: polarization induced charge and interface roughness scattering

Aniruddha Konar; Tian Fang; Nan Sun; Debdeep Jena

doi:10.1103/PhysRevB.82.193301

Anisotropic charge transport in non-polar GaN QW: polarization induced charge and interface roughness scattering

Mesoscale and Nanoscale Physics 2010-11-10 v2

Authors: Aniruddha Konar , Tian Fang , Nan Sun , Debdeep Jena

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Abstract

Charge transport in GaN quantum well (QW) devices grown in non-polar direction has been theoretically investigated . Emergence of anisotropic line charge scattering mechanism originating as a result of anisotropic rough surface morphology in conjunction with in-plane built-in polarization has been proposed. It has shown that in-plane growth anisotropy leads to large anisotropic carrier transport at low temperatures. At high temperatures, this anisotropy in charge transport is partially washed out by strong isotropic optical phonon scattering in GaN QW.

Keywords

GaN quantum well non-polar anisotropic charge transport polarization interface roughness scattering line charge scattering

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@article{arxiv.1009.2156,
  title  = {Anisotropic charge transport in non-polar GaN QW: polarization induced charge and interface roughness scattering},
  author = {Aniruddha Konar and Tian Fang and Nan Sun and Debdeep Jena},
  journal= {arXiv preprint arXiv:1009.2156},
  year   = {2010}
}

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4 pages, 4 figures

Anisotropic charge transport in non-polar GaN QW: polarization induced charge and interface roughness scattering

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