Charged basal stacking fault (BSF) scattering in nitride semiconductors

Aniruddha Konar; Tian Fang; Nan Sun; Debdeep Jena

doi:10.1063/1.3543846

Charged basal stacking fault (BSF) scattering in nitride semiconductors

Mesoscale and Nanoscale Physics 2011-01-18 v3 Quantum Physics

Authors: Aniruddha Konar , Tian Fang , Nan Sun , Debdeep Jena

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Abstract

A theory of charge transport in semiconductors in the presence of basal stacking faults is developed. It is shown that the presence of basal stacking faults leads to anisotropy in carrier transport. The theory is applied to carrier transport in non-polar GaN films consisting of a large number BSFs, and the result is compared with experimental data.

Keywords

basal stacking fault scattering nitride semiconductors charge transport anisotropy non-polar GaN

Cite

@article{arxiv.1011.0514,
  title  = {Charged basal stacking fault (BSF) scattering in nitride semiconductors},
  author = {Aniruddha Konar and Tian Fang and Nan Sun and Debdeep Jena},
  journal= {arXiv preprint arXiv:1011.0514},
  year   = {2011}
}

Comments

4 pages, 3 figures

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