Related papers: Long spin coherence in silicon with an electrical …
Donors in silicon hold considerable promise for emerging quantum technologies, due to the their uniquely long electron spin coherence times. Bi donors in silicon differ from P and other Group V donors in several significant respects: they…
Superpositions of rotational states in polar molecules induce strong, long-range dipolar interactions. Here we extend the rotational coherence by nearly one order of magnitude to 8.7(6) ms in a dilute gas of polar $^{23}$Na$^{40}$K…
The resistivity change due to electron spin resonance (ESR) absorption is investigated in a high-mobility two-dimensional electron system formed in a Si/SiGe heterostructure. Results for a specific Landau level configuration demonstrate…
A longitudinal electric field is used to control the transit time (through an undoped silicon vertical channel) of spin-polarized electrons precessing in a perpendicular magnetic field. Since an applied voltage determines the final spin…
Using the recently reported mode locking effect we demonstrate a highly robust control of electron spin coherence in an ensemble of (In,Ga)As quantum dots during the single spin coherence time. The spin precession in a transverse magnetic…
Bismuth (209Bi) is the deepest Group V donor in silicon and possesses the most extreme characteristics such as a 9/2 nuclear spin and a 1.5 GHz hyperfine coupling. These lead to several potential advantages for a Si:Bi donor electron spin…
We report on both experimental and theoretical study of conduction-electron spin polarization dynamics achieved by pulsed optical pumping at room temperature in GaAs(1-x)N(x) alloys with a small nitrogen content (x = 2.1, 2.7, 3.4%). It is…
We establish a testbed system for the development of high-sensitivity Electron Spin Resonance (ESR) techniques for small samples at cryogenic temperatures. Our system consists of a Niobium Nitride thin-film planar superconducting…
Optically addressable spins are actively investigated in quantum communication, processing and sensing. Optical and spin coherence lifetimes, which determine quantum operation fidelity and storage time, are often limited by spin-spin…
We demonstrate radio frequency (RF) readout of electrically detected magnetic resonance in phosphorus-doped silicon metal-oxide field-effecttransistors (MOSFETs), operated at liquid helium temperatures. For the first time, the Si:P…
The authors demonstrate readout of electrically detected magnetic resonance at radio frequencies by means of an LCR tank circuit. Applied to a silicon field-effect transistor at milli-kelvin temperatures, this method shows a 25-fold…
Using long-distance lateral devices, spin transport near the interface of Si and its native oxide (SiO2) is studied by spin-valve measurements in an in-plane magnetic field and spin precession measurements in a perpendicular magnetic field…
We measure the dependence of the conductivity of graphene as a function of magnetic field, temperature and carrier density and discover a saturation of the dephasing length at low temperatures that we ascribe to spin memory effects. Values…
Ballistic hot electron transport overcomes the well-known problems of conductivity and spin lifetime mismatch that plagues spin injection in semiconductors with ferromagnetic ohmic contacts. Through the spin-dependent mean-free-path, it…
Electron paramagnetic resonance of ensembles of phosphorus donors in silicon has been detected electrically with externally applied magnetic fields lower than 200 G. Because the spin Hamiltonian was dominated by the contact hyperfine term…
We propose a novel optical and electrical hybrid scheme for the measurement of nuclear spin qubits in silicon. By combining the environmental insensitivity of the integer quantum Hall effect with the optically distinguishable hyperfine…
We present a joint experimental and theoretical study of spin coherence properties of 39K, 85Rb, 87Rb, and 133Cs atoms trapped in a solid parahydrogen matrix. We use optical pumping to prepare the spin states of the implanted atoms and…
A novel method invented to measure the minute thermodynamic spin magnetization of dilute two dimensional fermions is applied to electrons in a silicon inversion layer. Interplay between the ferromagnetic interaction and disorder enhances…
We present pulsed electrically detected magnetic resonance (EDMR) measurements at low magnetic fields using posphorus-doped silicon with natural isotope composition as a model system. Our measurements show that pulsed EDMR experiments, well…
A heavy hole confined to an InGaAs quantum dot promises the union of a stable spin and optical coherence to form a near perfect, high-bandwidth spin-photon interface. Despite theoretical predictions and encouraging preliminary measurements,…