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Related papers: Long spin coherence in silicon with an electrical …

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Substitutional donor atoms in silicon are promising qubits for quantum computation with extremely long relaxation and dephasing times demonstrated. One of the critical challenges of scaling these systems is determining inter-donor distances…

We address the decoherence of a localized electron spin in an external magnetic field due to the hyperfine interaction with a lattice of nuclear spins. Using a completely non-perturbative method, rigorous bounds on the T_1 and T_2 coherence…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 Neil Shenvi , Rogerio de Sousa , K. Birgitta Whaley

We report a measurement of the spin-echo decay of a single electron spin confined in a semiconductor quantum dot. When we tip the spin in the transverse plane via a magnetic field burst, it dephases in 37 ns due to the Larmor precession…

Mesoscale and Nanoscale Physics · Physics 2009-08-17 F. H. L. Koppens , K. C. Nowack , L. M. K. Vandersypen

We note the existence of a set of magnetic field values where a simple Hahn echo sequence refocuses the dynamics of the full dipolar interaction, for spin systems of electron donors in silicon. As the refocussing occurs for both arbitrary…

Quantum Physics · Physics 2014-12-09 T. S. Monteiro

A prerequisite for exploiting spins for quantum data storage and processing is long spin coherence times. Phosphorus dopants in silicon (Si:P) have been favoured as hosts for such spins because of measured electron spin coherence times (T2)…

Interactions of electron spins with rotational degrees of freedom during collisions or with external fields are fundamental processes that limit the coherence time of spin gases. We experimentally study the decoherence of hot cesium spins…

Quantum Physics · Physics 2025-05-29 Mark Dikopoltsev , Avraham Berrebi , Uriel Levy , Or Katz

A single nuclear spin holds the promise of being a long-lived quantum bit or quantum memory, with the high fidelities required for fault-tolerant quantum computing. We show here that such promise could be fulfilled by a single phosphorus…

Spins of single donor atoms are attractive candidates for large scale quantum information processing in silicon, since quantum computation can be realized through the manipulation of electron and/or nuclear spins. We here report on…

Materials Science · Physics 2007-05-23 A. Ferretti , M. Fanciulli , A. Ponti , A. Schweiger

We demonstrate a coherence time of 2.1(1)~s for electron spin superposition states of a single trapped $^{40}$Ca$^+$ ion. The coherence time, measured with a spin-echo experiment, corresponds to residual rms magnetic field fluctuations…

By direct measurements of the complex optical conductivity $\sigma(\nu)$ of FeSi we have discovered a broad absorption peak centered at frequency $\nu_{0}(4.2 K) \approx 32 cm^{-1}$ that develops at temperatures below 20 K. This feature is…

Strongly Correlated Electrons · Physics 2015-03-19 V. V. Glushkov , B. P. Gorshunov , E. S. Zhukova , S. V. Demishev , A. A. Pronin , N. E. Sluchanko , S. Kaiser , M. Dressel

We demonstrate the coherent control and electrical readout of the nuclear spins of ionized phosphorus donors in natural silicon. By combining pulsed illumination with coherent electron spin manipulation, we selectively ionize the donor…

Materials Science · Physics 2012-01-17 Lukas Dreher , Felix Hoehne , Martin Stutzmann , Martin S. Brandt

We report theoretical and experimental studies of the longitudinal electron spin and orbital relaxation time of interstitial Li donors in $^{28}$Si. We predict that despite the near-degeneracy of the ground-state manifold the spin…

Other Condensed Matter · Physics 2008-07-25 V. N. Smelyanskiy , A. G. Petukhov , A. M. Tyryshkin , S. A. Lyon , T. Schenkel , J. W. Ager , E. E. Haller

In a strong magnetic field, ultra-relativistic electrons or positrons undergo spin flip transitions as they radiate, preferentially spin polarizing in one direction -- the Sokolov-Ternov effect. Here we show that this effect could occur…

Plasma Physics · Physics 2017-10-18 D. Del Sorbo , D. Seipt , T. G. Blackburn , A. G. R. Thomas , C. D. Murphy , J. G. Kirk , C. P. Ridgers

Using a microfabricated, p-type GaAs Hall bar, is it shown that the combined application of co-planar electric and magnetic fields enables the observation at 50 K of spatial oscillations of the photoluminescence circular polarization due to…

Mesoscale and Nanoscale Physics · Physics 2017-04-26 V. Notot , D. Paget , A. C. H. Rowe , L. Martinelli , F. Cadiz , S. Arscott

We report on the 29Si nuclear spin decoherence time at room temperature for a pure (99.99999%, 7N) and carrier-less (p-type, doping level of 10^15cm-3) silicon in which 29Si nuclei are naturally abundant (4.7%). Despite the experimental…

Materials Science · Physics 2007-05-23 Shinji Watanabe , Susumu Sasaki

Electrically detected magnetic resonance is used to identify recombination centers in a set of Czochralski grown silicon samples processed to contain strained oxide precipitates with a wide range of densities (~ 1e9 cm-3 to ~ 7e10 cm-3).…

Materials Science · Physics 2012-01-11 V. Lang , J. D. Murphy , R. J. Falster , J. J. L. Morton

We calculate the spin flip rates for an electron in a homogeneous magnetic field for low excitations ($N\le 5$). Our results apply for all field strengths including those beyond the critical field strength at which the spin contributes as…

High Energy Physics - Phenomenology · Physics 2019-09-25 Koen van Kruining , Felix Mackenroth , Jörg B. Götte

Acceleration of polarized electron~(positron) beams in a booster synchrotron may suffer from depolarization due to crossings of many spin depolarization resonances, which could limit its applications. We have studied the spin depolarization…

Accelerator Physics · Physics 2023-06-07 Tao Chen , Zhe Duan , Daheng Ji , Dou Wang

We report electronic control and measurement of an imbalance between spin-up and spin-down electrons in micron-scale open quantum dots. Spin injection and detection was achieved with quantum point contacts tuned to have spin-selective…

Mesoscale and Nanoscale Physics · Physics 2009-11-13 E. J. Koop , B. J. van Wees , D. Reuter , A. D. Wieck , C. H. van der Wal

We use electrical spin injection to probe exchange interactions in phosphorus doped silicon (Si:P). The detection is enabled by a magnetoresistance effect that demonstrates the efficiency of exchange in imprinting spin information from the…