Related papers: Single-atom doping for quantum device development …
We present an in-situ counted ion implantation experiment reducing the error on the ion number to 5 % enabling the fabrication of high-yield single photon emitter devices in wide bandgap semiconductors for quantum applications. Typical…
Semiconductor fabrication is a mainstay of modern civilization, enabling the myriad applications and technologies that underpin everyday life. However, while sub-10 nanometer devices are already entering the mainstream, the end of the…
Quantum emitters coupled to nanophotonic structures are an excellent platform for controllable single-photon scattering. The tunable light-matter interaction enables the construction of a single-photon switch -- a device that can route a…
We report on recent developments in the integration of optical microresonators into atom chips and describe some fabrication and implementation challenges. We also review theoretical proposals for quantum computing with single atoms based…
The controlled creation of quantum emitters in diamond represents a major research effort in the fabrication of single-photon devices. Here, we present the scalable production of silicon-vacancy (SiV) color centers in single-crystal diamond…
We perform quantum interference experiments on a single self-assembled semiconductor quantum dot. The presence or absence of a single exciton in the dot provides a qubit that we control with femtosecond time resolution. We combine a set of…
Hands-on experimental experience with quantum systems in the undergraduate physics curriculum provides students with a deeper understanding of quantum physics and equips them for the fast-growing quantum science industry. Here we present an…
Atomically confined spins are emerging as active components in quantum optoelectronic devices such as quantum bits and sensors. However, interrogating single spins at atomic length-scales remains a sizeable challenge, limited by diffraction…
Single-molecule technology stands as a powerful tool, enabling the characterization of intricate structural and dynamic information that would otherwise remain concealed within the averaged behaviors of numerous molecules. This technology…
Single-photon transitions are one of the key technologies for designing and operating very-long-baseline atom interferometers tailored for terrestrial gravitational-wave and dark-matter detection. Since such setups aim at the detection of…
Spin states in semiconductors provide exceptionally stable and noise-resistant environments for qubits, positioning them as optimal candidates for reliable quantum computing technologies. The proposal to use nuclear and electronic spins of…
The incorporation of phosphorus in silicon is studied by analyzing phosphorus delta-doped layers using a combination of scanning tunneling microscopy, secondary ion mass spectrometry and Hall effect measurements. The samples are prepared by…
A proton irradiation site for silicon detectors has been developed and commissioned at the Bonn Isochronous Cyclotron. The accelerator provides 14 MeV proton beams of up to 1 $\mu$A at beam widths of a few mm to the setup. Devices Under…
Dopant atoms in semiconductors can be ionized with $\sim10$ meV energy depositions, allowing for the design of low-threshold detectors. We propose using doped semiconductor targets to search for sub-MeV dark matter scattering or sub-eV dark…
Atomic-scale understanding of phosphorous donor wave functions underpins the design and optimisation of silicon based quantum devices. The accuracy of large-scale theoretical methods to compute donor wave functions is dependent on…
Semiconductor nanoparticles (quantum dots) were studied in the context of liquid scintillator development for upcoming neutrino experiments. The unique optical and chemical properties of quantum dots are particularly promising for the use…
In this chapter we will discuss the technology and experimental techniques to realize quantum dot (QD) single photon sources combining high outcoupling efficiencies and highest degrees of non-postselected photon indistinguishability. The…
We demonstrate electrical control of Si:P double dots in which the potential is defined by nanoscale phosphorus doped regions. Each dot contains approximately 600 phosphorus atoms and has a diameter close to 30 nm. On application of a…
Semiconducting single-walled carbon nanotubes (SWCNTs) are a promising thermoelectric material with high power factors after chemical p- or n-doping. Understanding the impact of dopant counterions on charge transport and thermoelectric…
We propose a non-destructive means of characterizing a semiconductor wafer via measuring parameters of an induced quantum dot on the material system of interest with a separate probe chip that can also house the measurement circuitry. We…