Related papers: Single-atom doping for quantum device development …

We present a highly efficient molecular dynamics scheme for calculating the concentration depth profile of dopants in ion irradiated materials. The scheme incorporates several methods for reducing the computational overhead, plus a rare…

Liquid scintillator detectors are widely used in modern neutrino studies. The unique optical properties of semiconducting nanocrystals, known as quantum dots, offer intriguing possibilities for improving standard liquid scintillator,…

Artificial lattices constructed from individual dopant atoms within a semiconductor crystal hold promise to provide novel materials with tailored electronic, magnetic, and optical properties. These custom engineered lattices are anticipated…

We demonstrate an optical method for detecting the mechanical oscillations of an atom with single-phonon sensitivity. The measurement signal results from the interference between the light scattered by a single trapped atomic ion and that…

Decision making is critical in our daily lives and for society in general and is finding evermore practical applications in information and communication technologies. Herein, we demonstrate experimentally that single photons can be used to…

We present two applications of a single nitrogen vacancy center in a nanodiamond as quantum probe for plasmonic nanostructures. Coupling to the nanostructures is achieved in a highly controlled manner by picking up a pre-characterized…

Ion implantation is a non-equilibrium doping technique which introduces impurity atoms into a solid regardless of thermodynamic considerations. The formation of metastable alloys above the solubility limit, minimized contribution of lateral…

The influence of an impurity atom on the electrostatic behaviour of a Single Molecular Transistor (SMT) was investigated through Ab-initio calculations in a double-gated geometry. The charge stability diagram carries unique signature of the…

The recent advances in single atom detection and manipulation in experiments with ultracold quantum gases are reviewed. The discussion starts with the basic principles of trapping, cooling and detecting single ions and atoms. The…

In the design of quantum computer architectures that take advantage of the long coherence times of dopant nuclear and electron spins in the solid-state, single-spin detection for readout remains a crucial unsolved problem. Schemes based on…

We study the dynamics of an atomic quantum dot, i.e. a single atom in a tight optical trap which is coupled to a superfluid reservoir via laser transitions. Quantum interference between the collisional interactions and the laser induced…

Integrated quantum optical hybrid devices consist of fundamental constituents such as single emitters and tailored photonic nanostructures. A reliable fabrication method requires the controlled deposition of active nanoparticles on…

We describe a robust and reliable fluorescence detector for single atoms that is fully integrated into an atom chip. The detector allows spectrally and spatially selective detection of atoms, reaching a single atom detection efficiency of…

We present a highly efficient molecular dynamics scheme for calculating the concentration profile of dopants implanted in group-IV alloy, and III-V zinc blende structure materials. Our program incorporates methods for reducing computational…

With the best overall electronic and thermal properties, single crystal diamond (SCD) is the extreme wide bandgap material that is expected to revolutionize power electronics and radio-frequency electronics in the future. However, turning…

Presented in this paper is a proof-of-concept for a new approach to single electron pumping based on a Single Atom Transistor (SAT). By charge pumping electrons through an isolated dopant atom in silicon, precise currents of up to 160 pA at…

Considering a double-barrier structure formed by a silicon quantum dot covered by natural oxide, we derive simple conditions for the conductance of the dot to become a step-like function of the number of doping atoms inside the dot, with…

The progress of miniaturisation in integrated electronics has led to atomic and nanometre-sized dopant devices in silicon. Such structures can be fabricated routinely by hydrogen resist lithography, using various dopants such as phosphorous…

To date, individual addressing of ion qubits has relied primarily on local Rabi or transition frequency differences between ions created via electromagnetic field spatial gradients or via ion transport operations. Alternatively, it is…

Single nuclear spins in the solid state have long been envisaged as a platform for quantum computing, due to their long coherence times and excellent controllability. Measurements can be performed via localised electrons, for example those…