English

Single-spin readout for buried dopant semiconductor qubits

Quantum Physics 2010-06-29 v1

Abstract

In the design of quantum computer architectures that take advantage of the long coherence times of dopant nuclear and electron spins in the solid-state, single-spin detection for readout remains a crucial unsolved problem. Schemes based on adiabatically induced spin-dependent electron tunnelling between individual donor atoms, detected using a single electron transistor (SET) as an ultra-sensitive electrometer, are thought to be problematic because of the low ionisaton energy of the final D- state. In this paper we analyse the adiabatic scheme in detail. We find that despite significant stabilization due to the presence of the D+, the field strengths required for the transition lead to a shortened dwell-time placing severe constraints on the SET measurement time. We therefore investigate a new method based on resonant electron transfer, which operates with much reduced field strengths. Various issues in the implementation of this method are also discussed.

Keywords

Cite

@article{arxiv.quant-ph/0402077,
  title  = {Single-spin readout for buried dopant semiconductor qubits},
  author = {L. C. L. Hollenberg and C. J. Wellard and C. I. Pakes and A. G. Fowler},
  journal= {arXiv preprint arXiv:quant-ph/0402077},
  year   = {2010}
}

Comments

12 pages, 5 figures, 1 table