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CMOS Monolithic Active Pixel Sensors (MAPS) were chosen as sensor technology for the vertex detectors of STAR, CBM and the upgraded ALICE-ITS. They also constitute a valuable option for tracking devices at future e+e- colliders. Those…

Instrumentation and Detectors · Physics 2016-07-27 M. Deveaux , D. Doering , P. Scharrer , J. Stroth

CMOS Monolithic Active Pixel Sensors (MAPS) are considered as an emerging technology in the field of charged particle tracking. They will be used in the vertex detectors of experiments like STAR, CBM and ALICE and are considered for the ILC…

Instrumentation and Detectors · Physics 2017-06-09 B. Linnik , T. Bus , M. Deveaux , D. Doering , P. Kudejova , F. M. Wagner , A. Yazgili , J. Stroth

This work focuses on the investigation of radiation induced defects responsible for the degradation of silicon detectors. Comparative studies of the defects induced by irradiation with 60Co- rays, 6 and 15 MeV electrons, 23 GeV protons and…

Instrumentation and Detectors · Physics 2010-02-01 Ioana Pintiliea , Gunnar Lindstroem , Alexandra Junkes , Eckhart Fretwurst

CMOS Monolithic Active Pixel Sensors (MAPS) are proposed as a technology for various vertex detectors in nuclear and particle physics. We discuss the mechanisms of ionizing radiation damage on MAPS hosting the the dead time free, so-called…

Surface damage caused by ionizing radiation in SiO$_2$ passivated silicon particle detectors consists mainly of the accumulation of a positively charged layer along with trapped-oxide-charge and interface traps inside the oxide and close to…

In this work, the radiation responses of silicon photonic passive devices built in silicon-on-insulator (SOI) technology are investigated through high energy neutron and 60Co gamma-ray irradiation. The wavelengths of both micro-ring…

We have investigated the effects caused by proton-induced radiation damage on Multi-Pixel Photon Counter (MPPC), a pixelized photon detector developed by Hamamatsu Photonics. The leakage current of irradiated MPPC samples linearly increases…

Instrumentation and Detectors · Physics 2014-10-01 T. Matsumura , T. Matsubara , T. Hiraiwa , K. Horie , M. Kuze , K. Miyabayashi , A. Okamura , T. Sawada , S. Shimizu , T. Shinkawa , T. Tsunemi , M. Yosoi

Complementary metal-oxide-semiconductor (CMOS) detectors are a competitive choice for current and upcoming astronomical missions. To understand the performance variations of CMOS detectors in space environment, we investigate the total…

Instrumentation and Methods for Astrophysics · Physics 2024-03-26 Mengxi Chen , Zhixing Ling , Mingjun Liu , Qinyu Wu , Chen Zhang , Jiaqiang Liu , Zhenlong Zhang , Weimin Yuan , Shuang-Nan Zhang

Monolithic active pixel sensors with depleted substrates present a promising option for pixel detectors in high-radiation environments. High-resistivity silicon substrates and high bias voltage capabilities in commercial CMOS technologies…

CMOS Monolithic Active Pixel Sensors (CPS) are ultra-light and highly granular silicon pixel detectors suited for highly sensitive charged particle tracking. Being manufactured with cost efficient standard CMOS processes, CPS may integrate…

Instrumentation and Detectors · Physics 2020-01-29 M. Deveaux

Complementary metal-oxide-semiconductor (CMOS) sensors are a competitive choice for future X-ray astronomy missions. Typically, CMOS sensors on space astronomical telescopes are exposed to a high dose of irradiation. We investigate the…

Instrumentation and Methods for Astrophysics · Physics 2023-12-05 Mingjun Liu , Zhixing Ling , Qinyu Wu , Chen Zhang , Jiaqiang Liu , Zhenlong Zhang , Weimin Yuan , Shuang-Nan Zhang

The present work aims to study the effect of ion irradiation on structural and electrical properties and their correlation with the defects in Zn1-xMnxO type system. Zn1-xMnxO (x = 0.02, 0.04) samples have been synthesized by solid-state…

Materials Science · Physics 2011-05-10 S. K. Neogi , S. Chattopadhyay , Aritra Banerjee , S. Bandyopadhyay , A. Sarkar , Ravi Kumar

The radiation hardness of the AToM chips of the BaBar Silicon Vertex Tracker has been investigated by means of irradiations with photons from a 60Co source and 0.9 GeV electrons. The increase in noise and the decrease in gain of the…

Instrumentation and Detectors · Physics 2007-05-23 G. Calderini , S. Bettarini , M. Bondioli , L. Bosisio , S. Dittongo , F. Forti , M. A. Giorgi

The X-ray SOI pixel sensor onboard the FORCE satellite will be placed in the low earth orbit and will consequently suffer from the radiation effects mainly caused by geomagnetically trapped cosmic-ray protons. Based on previous studies on…

We studied the influence of the disorder introduced in polycrystalline MgB2 samples by neutron irradiation. To circumvent self shielding effects due to the strong interaction between thermal neutrons and 10B we employed isotopically…

The effects of radiation damage in silicon photomultipliers (SiPMs) from gamma rays have been measured and compared with the damage produced by neutrons. Several types of MPPCs from Hamamatsu were exposed to gamma rays and neutrons at the…

Instrumentation and Detectors · Physics 2019-09-04 B. Biró , G. David , A. Fenyvesi , J. S. Haggerty , J. Kierstead , E. J. Mannel , T. Majoros , J. Molnar , F. Nagy , S. Stoll , B. Ujvari , C. L. Woody

We have been developing the SOI pixel detector ``INTPIX'' for space use and general purpose applications such as the residual stress measurement of a rail and high energy physics experiments. INTPIX is a monolithic pixel detector composed…

We have been developing the monolithic active pixel detector "XRPIX" onboard the future X-ray astronomical satellite "FORCE". XRPIX is composed of CMOS pixel circuits, SiO2 insulator, and Si sensor by utilizing the silicon-on-insulator…

We find in experiments a linear dependence of ionization irradiation-induced degradations on pre-irradiation values of the input bias current in bipolar devices with simple input stages. The dependence is found to generally exist in all…

Space Physics · Physics 2021-07-27 Yu Song , Jie Zhao , Shun Li , Shi-Yao Hou , Hang Zhou , Yang Liu , Ying Zhang , Dechao Meng , Gang Dai , Jian Zhang

Monolithic CMOS pixel sensors offer unprecedented opportunities for fast nano-imaging through direct electron detection in transmission electron microscopy. We present the design and a full characterisation of a CMOS pixel test structure…

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