Related papers: Radiation Induced Effects in a Monolithic Active P…
An improved SOI-MAPS (Silicon On Insulator Monolithic Active Pixel Sensor) for ionizing radiation based on thick-film High Voltage SOI technology (HV-SOI) has been developed. Similar to existing Fully Depleted SOI-based (FD-SOI) MAPS, a…
The X-ray Silicon-On-Insulator (SOI) pixel sensor named XRPIX has been developed for the future X-ray astronomical satellite FORCE. XRPIX is capable of a wide-band X-ray imaging spectroscopy from below 1 keV to a few tens of keV with a good…
The innermost part of the tracking detector of the ATLAS experiment consists mainly of planar n$^+$-in-n silicon pixel sensors. During the phase-0 upgrade, the Insertable B-Layer (IBL) was installed closest to the beam pipe. Its pixels are…
Integrated sensing and communication (ISAC) is a novel capability expected for sixth generation (6G) cellular networks. To that end, several challenges must be addressed to enable both mono- and bistatic sensing in existing deployments. A…
The synergistic effects of neutron and gamma ray radiated PNP transistors are systematically investigated as functions of the neutron fluence, gamma ray dose, and dose rate. We find that the damages show a `tick'-like dependence on the…
In silicon sensors high densities of electron-hole pairs result in a change of the current pulse shape and spatial distribution of the collected charge compared to the situation in presence of low charge carrier densities. This paper…
Using the transport and magnetization measurements the influence of neutron irradiation at a fluence of 5x10$^{17}$ n cm$^{-2}$ on (B0.65C0.35)Ba1.4Sr0.6Ca2Cu3Oz has been investigated. The neutron irradiation was found to decrease critical…
In multi-electrode detectors, the motion of excess carriers generated by ionizing radiation induces charge pulses at the electrodes, whose intensities and polarities depend on the geometrical, electrostatic and carriers transport properties…
Neutrino-nucleus scatterings in the detector could induce electron ionization signatures due to the Migdal effect. We derive prospects for a future detection of the Migdal effect via coherent elastic solar neutrino-nucleus scatterings in…
In low earth orbit, there are many cosmic rays composed primarily of high energy protons. These cosmic rays cause surface and bulk radiation effects, resulting in degradation of detector performance. Quantitative evaluation of radiation…
Investigating the role of disorder in superconductors is an essential part of characterizing the fundamental superconducting properties as well as assessing potential applications of the material. In most cases, the information available on…
The report contains various aspects of radiation damage in silicon detectors subjected to high intensity hadron and electromagnetic irradiation. It focuses on improvements for the foreseen LHC applications, employing oxygenation of silicon…
The current understanding of radiation tollerance of Silicon Photomultipliers (SiPMs) is reviewd. Radiation damage in silicon sensors is briefly introduced, surface and bulk effects are separately addressed. Results on the operation of…
Beamstrahlung will constitute an important source of background in a pixel vertex detector at the future International Linear Collider. Electron and positron tracks of this origin impact the pixel planes at angles generally larger than…
Ionizing radiation induces defects in STI oxides in current MOSFETs. These defects may degrade the performance of the MOS circuit. Analytical models for the buildup of these defects during the radiation exposure are available in literature.…
Silicon Photo-Multipliers (SiPM) are becoming the photo-detector of choice for increasingly more particle detection applications, from fundamental physics to medical and societal applications. One major consideration for their use at…
Heterointerfaces are ubiquitous in modern devices, found in technologies ranging from microelectronics to structural components for energy applications. Many of these emerging technologies are found in applications such as satellites,…
Using silicon MOSFETs with thin (5nm) thermally grown SiO2 gate dielectrics, we characterize the density of electrically active traps at low-temperature after 16keV phosphorus ion-implantation through the oxide. We find that, after rapid…
Irradiation effects in Ni-17Mo-7Cr alloy, which is an newly developed structural material for molten salt reactor (MSR), have been systematically investigated by using 3MeV Au ions at different fluences, corresponding to dpa number…
In this contribution, the correlation between fundamental interaction processes induced by radiation in silicon and observable effects which limit the use of silicon detectors in high energy physics experiments is investigated in the frame…