Related papers: Radiation Induced Effects in a Monolithic Active P…
Planar silicon pixel sensors with modified n$^+$-implantation shapes based on the IBL pixel sensor were designed in Dortmund. The sensors with a pixel size of $250\,\mu$m $\times$ $50\,\mu$m are produced in n$^+$-in-n sensor technology. The…
The phase-2 upgrade of the LHC will require novel pixel readout chips, which deliver hit information at drastically increased data rates and tolerate unprecedented radiation levels. The large-scale prototype chip RD53A has been designed by…
Ion implantation is widely used as a surrogate for neutron irradiation in the investigation of radiation damage on the properties of materials. Due to the small depth of damage, micromechanical methods must be used to extract material…
The use of Silicon Photo-Multipliers(SiPMs)has become popular in the design of High Energy Physics experimental apparatus with a growing interest for their application in detector area where a significant amount of non-ionising dose is…
Silicon pixel detectors are at the core of the current and planned upgrade of the ATLAS experiment at the LHC. Given their close proximity to the interaction point, these detectors will be exposed to an unprecedented amount of radiation…
In this paper a detailed simulation of irradiated pixel sensors was used to investigate the effects of radiation damage on charge sharing and position determination. The simulation implements a model of radiation damage by including two…
Monolithic Active Pixel Sensors (MAPS) have been developed since the late 1990s employing silicon substrate with a thin epitaxial layer in which deposited charge is collected by disordered diffusion rather than by drift in an electric…
We are investigating adaption of SOI pixel devices for future high energy physic(HEP) experiments. The pixel sensors are required to be operational in very severe radiation environment. Most challenging issue in the adoption is the TID…
Recent advancements in particle physics demand pixel detectors that can withstand increased luminosity in the future collider experiments. In response, MALTA, a novel monolithic active pixel detector, has been developed with a cutting-edge…
A CMOS pixel sensor, named Supix-1, is developed for a pixelated silicon tracker for the Circular Electron-Positron Collider (CEPC) project. The sensor, consisted of nine sectors varying in pixel sizes, diode sizes and geometries, is…
Multiharmonic ac-magnetic susceptibility \ch11,\chi2,chi3, of neutron irradiated Li-doped YBa2Cu3O7-x has revealed a nonmonotonic dependence of all harmonics on the neutron fluence. The irradiation has a strongly depressive influence on the…
In view of the tracking detector application to the ATLAS High Luminosity LHC (HL-LHC) upgrade, we have developed a new generation of High Voltage CMOS (HV-CMOS) monolithic pixel-sensor prototypes featuring the AMS aH18 (180 nm) commercial…
The radiation damage in 200 um thick Schottky diodes made on semi-insulating (SI) undoped GaAs Liquid Encapsulated Czochralski (LEC) bulk material with resistivities between 0.4 and 8.9*10E7 Ohm*cm were studied using alpha-spectroscopy,…
In this paper, we report the measurement of the neutron radiation hardness of custom Silicon Photomultipliers arrays (SiPMs) manufactured by three companies: Hamamatsu (Japan), AdvanSiD (Italy) and SensL (Ireland). These custom SiPMs…
Active Pixel Sensor (APS) technology has shown promise for next-generation vertex detectors. This paper discusses the design and testing of two generations of APS chips. Both are arrays of 128 by 128 pixels, each 20 by 20 micro-m. Each…
In the HEP-experiments of High Luminosity upgrade of the Large Hadron Collider (HL-LHC), the application of isolation implants like $p$-stop between $n^+$-electrodes of position sensitive $n$-on-$p$ sensors has been typically considered to…
Various commercial coated conductors were irradiated with fast neutrons in order to introduce randomly distributed, uncorrelated defects which increase the critical current density, Jc, in a wide temperature and field range. The…
Optomechanical resonators were fabricated on a silicon-on-insulator (SOI) substrate that had been implanted with phosphorus donors. The resonators' mechanical and optical properties were then measured (at 6 kelvin and room temperature)…
Limited radiation hardness is the primary drawback to implementing Silicon Photomultipliers (SiPMs) in high-luminosity environments, such as the Compressed Baryonic Matter (CBM) experiment. Hadron irradiation generates defects in the…
We have developed a neutron imaging sensor based on an INTPIX4-SOI pixelated silicon device. Neutron irradiation tests are performed at several neutron facilities to investigate sensor's responses for neutrons. Detection efficiency is…