Related papers: High Density Through Silicon Via (TSV)
Optical interconnects are the most promising solution to address the data-movement bottleneck in data centers. Silicon microdisks, benefiting from their compact footprint, low energy consumption, and wavelength division multiplexing (WDM)…
This study investigates a high Q-factor spiral inductor fabricated by the CMOS (complementary metal oxide semiconductor) process and a post-process. The spiral inductor is manufactured on silicon substrate using the 0.35 micrometers CMOS…
Using a simple and cost-effective water jet process, silicon etch depth limitations are overcome to realize a $6\,$mm deep atomic vapor cell. While the minimum silicon feature size was limited to a $1.5\,$mm width in these first generation…
Terahertz (THz) imaging has the ability to see through otherwise opaque materials. However, due to the long wavelengths of THz radiation ({\lambda}=300{\mu}m at 1THz), far-field THz imaging techniques are heavily outperformed by optical…
Disorder induced phase slip (PS) events appearing in the current voltage characteristics (IVCs) are reported for two-dimensional TiN thin films produced by a robust substrate mediated nitridation technique. Here, high temperature annealing…
Boundary Singularity Method (BSM) was used to model Chemical Vapor Infiltration (CVI) in a fibrous preform. Straight, long fibers of varying cross-sectional geometry, representing fibers of a preform, were placed within a domain of a…
Tunneling field-effect transistors (TFETs) based on 2D materials are promising steep sub-threshold swing (SS) devices due to their tight gate control. There are two major methods to create the tunnel junction in these 2D TFETs: electrical…
Many quantum networking applications require efficient photonic interfaces to quantum memories which can be produced at scale and with high yield. Synthetic diamond offers unique potential for the implementation of this technology as it…
A flow-through sensing platform based on open-ended porous silicon (PSi) microcavity membranes that are compatible with integration in on-chip sensor arrays is demonstrated. Due to the high aspect ratio of PSi nanopores, the performance of…
We use all-electrical methods to inject, transport, and detect spin-polarized electrons vertically through a 350-micron-thick undoped single-crystal silicon wafer. Spin precession measurements in a perpendicular magnetic field at different…
While microprocessors are used in various applications, they are precluded from the use in high-energy physics applications due to the harsh radiation present. To overcome this limitation a microprocessor design must withstand high doses of…
Continuing advancements in quantum information processing have caused a paradigm shift from research mainly focused on testing the reality of quantum mechanics to engineering qubit devices with numbers required for practical quantum…
We report electronic transport on n-type silicon Single Electron Transistors (SETs) fabricated in Complementary Metal Oxide Semiconductor (CMOS) technology. The n-MOSSETs are built within a pre-industrial Fully Depleted Silicon On Insulator…
Monolithic Three-Dimensional Integrated Circuits (M3D-IC) has become an attractive option to increase the transistor density. In M3D-IC, substrate layers are realized on top of previous layers using sequential integration techniques. Recent…
A new approach is introduced to significantly improve the performance of thermophotovoltaic (TPV) systems by using low-dimensional thermal emitters and photovoltaic (PV) cells. By reducing the thickness of both the emitter and the PV cell,…
Photonic integrated circuits provide a compact platform for ultrafast and energy-efficient matrix-vector multiplications (MVMs) in the optical domain. Recently, schemes based on time-division multiplexing (TDM) have been proposed as…
Recent advances in holography, wireless sensing and light fidelity technologies have resulted in the need for antennas that can support highly efficient beam directivity for a broad angular range. Transmitarrays have been shown to be…
Thin film oxides are a source of endless fascination for the materials scientist. These materials are highly flexible, can be integrated into almost limitless combinations, and exhibit many useful functionalities for device applications.…
The prospect of building a quantum information processor underlies many recent advances ion trap fabrication techniques. Potentially, a quantum computer could be constructed from a large array of interconnected ion traps. We report on a…
Scanning tunneling microscope (STM) is a powerful tool for studying the structural and electronic properties of materials at the atomic scale. The combination of low temperature and high magnetic field for STM and related spectroscopy…