Related papers: High Q-factor CMOS-MEMS inductor
Planar strip inductors consisting of two Fe-N films enclosing a conducting film made of Cu, were fabricated on oxidized Si substrates. The inductors were 1mm long, 2 to 100 um wide, with layers of thickness ~0.1 um for the magnetic films…
This article is present the effected oxide capacitor in CMOS structure of integrated circuit level 5 micrometer technology. It has designed and basic structure of MOS diode. It establish with aluminum metallization layer by sputtering…
The smart integrated systems of tomorrow would demand a combination of micromechanical components and traditional electronics. On-chip solutions will be the ultimate goal. One way of making such systems is to implement the mechanical parts…
In this paper we present an improved process for producing elastomer transistor stamps and high-mobility organic field-effect transistors (FETs) based on semiconducting acene molecular crystals. In particular, we have removed the need to…
Silicon spin qubits are a promising candidate for quantum computing, thanks to their high coherence, high controllability and manufacturability. However, the most scalable complementary metal-oxide-semiconductor (CMOS) based implementations…
Complementary metal-oxide semiconductor (CMOS) technology has radically reshaped the world by taking humanity to the digital age. Cramming more transistors into the same physical space has enabled an exponential increase in computational…
The quality of the semiconductor-barrier interface plays a pivotal role in the demonstration of high quality reproducible quantum dots for quantum information processing. In this work, we have measured SiMOSFET Hall bars on undoped Si…
We present spiral resonators of thin film niobium (Nb) that exhibit large geometric inductance, high critical magnetic fields and high single photon quality factors. These low loss geometric inductors can be a compelling alternative to…
We demonstrate the generation of higher-order modulation formats using silicon-based inphase/quadrature (IQ) modulators at symbol rates of up to 100 GBd. Our devices exploit the advantages of silicon-organic hybrid (SOH) integration, which…
Fabrication of quantum processors in advanced 300 mm wafer-scale complementary metal-oxide-semiconductor (CMOS) foundries provides a unique scaling pathway towards commercially viable quantum computing with potentially millions of qubits on…
We report ring resonators on a silicon germanium on silicon platform operating in the mid-infrared wavelength range around 3.5 - 4.6 {\mu}m with quality factors reaching up to one million. Advances in fabrication technology enable us to…
Freestanding Silicon nitride (SiN) devices are central to the field of nanomechanical resonators and for other technology applications such as transmission electron imaging and nanopore bioassays. The nanofabrication techniques used for…
Silicon spin qubits are among the most promising candidates for large scale quantum computers, due to their excellent coherence and compatibility with CMOS technology for upscaling. Advanced industrial CMOS process flows allow wafer-scale…
Controlled atomic scale fabrication of functional devices is one of the holy grails of nanotechnology. The most promising class of techniques that enable deterministic nanodevice fabrication are based on scanning probe patterning or surface…
Quantum processing units will be modules of larger information processing systems containing also digital and analog electronics modules. Silicon-based quantum computing offers the enticing opportunity to manufacture all the modules using…
In this study, we investigate a novel design of an on-chip nested coupled ring resonator to enhance the quality factor and the effective length of the resonator. The configuration consists of an open ring and racetrack resonator, with…
The semicylindrical microresonator with relatively simple excitation with a plane wave is studied. The resonator is formed on the base of the dielectric/metal/dielectric structure, where the wave energy penetrates into resonator through a…
Plasmonic resonators have drawn more attention due to the ability to confine light into subwavelength scale. However, they always suffer from a low quality (Q) factor owing to the intrinsic loss of metal. Here, we numerically propose a…
In this paper, an architecture designed for electrical measurement of the quality factor of MEMS resonators is proposed. An estimation of the measurement performance is made using PSPICE simulations taking into account the component's…
We report on fabrication of a microtoroid resonator of a high-quality factor (i. e., Q-factor of ~3.24x10^6 measured under the critical coupling condition) integrated in a microfluidic channel using femtosecond laser three-dimensional (3D)…