Coherent modulation up to 100 GBd 16QAM using silicon-organic hybrid (SOH) devices
Abstract
We demonstrate the generation of higher-order modulation formats using silicon-based inphase/quadrature (IQ) modulators at symbol rates of up to 100 GBd. Our devices exploit the advantages of silicon-organic hybrid (SOH) integration, which combines silicon-on-insulator waveguides with highly efficient organic electro-optic (EO) cladding materials to enable small drive voltages and sub-millimeter device lengths. In our experiments, we use an SOH IQ modulator with a {\pi}-voltage of 1.6 V to generate 100 GBd 16QAM signals. This is the first time that the 100 GBd mark is reached with an IQ modulator realized on a semiconductor substrate, leading to a single-polarization line rate of 400 Gbit/s. The peak-to-peak drive voltages amount to 1.5 Vpp, corresponding to an electrical energy dissipation in the modulator of only 25 fJ/bit.
Cite
@article{arxiv.1710.00056,
title = {Coherent modulation up to 100 GBd 16QAM using silicon-organic hybrid (SOH) devices},
author = {Stefan Wolf and Heiner Zwickel and Clemens Kieninger and Matthias Lauermann and Wladislaw Hartmann and Yasar Kutuvantavida and Wolfgang Freude and Sebastian Randel and Christian Koos},
journal= {arXiv preprint arXiv:1710.00056},
year = {2019}
}