Related papers: High Q-factor CMOS-MEMS inductor
The performance and scalability of superconducting quantum circuits are fundamentally constrained by non-equilibrium quasiparticles, which induce microwave losses that limit resonator quality factors and qubit coherence times. Understanding…
Full-scale quantum computers require the integration of millions of quantum bits. The promise of leveraging industrial semiconductor manufacturing to meet this requirement has fueled the pursuit of quantum computing in silicon quantum dots.…
We demonstrate efficient, low power, continuous-wave four-wave mixing in the C-band, using a high index doped silica glass micro ring resonator having a Q-factor of 1.2 million. A record high conversion efficiency for this kind of device is…
A bismuth-doped silicon substrate was analyzed by using a magnetometer based on a superconducting flux qubit. The temperature dependence of the magnetization indicates that the silicon substrate contains at least two signal sources,…
We have fabricated a custom cryogenic Complementary Metal-Oxide-Semiconductor (CMOS) integrated circuit that has a higher measurement bandwidth compared with conventional room temperature electronics. This allowed implementing single shot…
In order to continue to improve integrated circuit performance and functionality, scaled transistors with short channel lengths and low thickness are needed. But the further scaling of silicon-based devices and the development of…
This work presents an industrially scalable, power-efficient and high-performance quantum magnetometer chip based on proprietary 4H-silicon carbide (SiC) technology, leveraging wafer-scale fabrication techniques to optimize V2 silicon…
As the superconducting qubit platform matures towards ever-larger scales in the race towards a practical quantum computer, limitations due to qubit inhomogeneity through lack of process control become apparent. To benefit from the advanced…
With the increase of the speed of computers, timing and power requirements are becoming crucial for memory devices. The main objective of the paper is to modify 180nm CMOS sense amplifier design by using memristive devices and improve the…
Scalability and performance of current flash memories can be improved substantially by replacing the floating poly-Si gate by a layer of Si dots. This multi-dot layer can be fabricated CMOS-compatibly in very thin gate oxide by ion beam…
Terahertz (THz) technology is rapidly evolving, and the advancement of data and information processing devices is essential. Silicon THz microresonators provide perfect platforms to develop compact and integrated devices that could…
We study quantum interference effects of a qubit whose energy levels are continuously modulated. The qubit is formed by an impurity electron spin in a silicon tunneling field-effect transistor, and it is read out by spin blockade in a…
Various chips for the silicon sensors measurements are described. These chips are based on 0.35 um and 0.18um CMOS technology. Several analog chips together with self-trigger /derandomizer one allow to measure silicon sensors designed for…
We demonstrate the efficient modulation of flux-tunable superconducting resonators (FTRs) using flip-chip or on-chip-based input coils. The FTRs we use are aluminum-based quarter-wave coplanar waveguide resonators terminated with 100um or…
The development of ultrahigh quality factor (Q) microresonators has been driving such technologies as cavity quantum electrodynamics (QED), high-precision sensing, optomechanics, and optical frequency comb generation. Here we report…
We present a gate-voltage tunable transmon qubit (gatemon) based on planar InAs nanowires that are selectively grown on a high resistivity silicon substrate using III-V buffer layers. We show that low loss superconducting resonators with an…
Inductance of superconducting thin-film inductors and structures with linewidth down to 250 nm has been experimentally evaluated. The inductors include various striplines and microstrips, their 90-degree bends and meanders, interlayer vias,…
Emerging memristor-based array architectures have been effectively employed in non-volatile memories and neuromorphic computing systems due to their density, scalability and capability of storing information. Nonetheless, to demonstrate a…
The silicon metal-oxide-semiconductor (MOS) material system is technologically important for the implementation of electron spin-based quantum information technologies. Researchers predict the need for an integrated platform in order to…
This paper investigates the implementation of microwave and mm-wave integrated circuits for control and readout of electron/hole spin qubits, as elementary building blocks for future emerging quantum computing technologies. In particular,…