Related papers: Quantized current of a hybrid single-electron tran…
Single-electron pumps based on semiconductor quantum dots are promising candidates for the emerging quantum standard of electrical current. They can transfer discrete charges with part-per-million (ppm) precision in nanosecond time scales.…
Silicon carbide (SiC) metal-oxide-semiconductor field-effect-transistors (MOSFETs) enable high-voltage and high-temperature power conversion. Compared to Si devices, they suffer from pronounced gate leakage due to the reduced electron…
We have investigated the effect of a difference in the tunnelling resistances of the individual normal metal-insulator-superconductor (NIS) tunnel junctions in a double junction SINIS device, with particular emphasis on the impact on the…
As a fundamental requisite for thermotronics, controlling heat flow has been a longstanding quest in solid state physics. Recently, there has been a lot of interest in nanoscale hybrid systems as possible candidates for thermal devices. In…
The quantum efficiency, which characterizes the quality of information gain against information loss, is an important figure of merit for any realistic quantum detectors in the gradual process of collapsing the state being measured. In this…
Dissipative properties of the electromagnetic environment as well as on-chip RC filtering are shown to suppress random state switchings in the two-junction superconductor(S) - normal metal(N) electron trap. In our experiments, a local…
In this work, we demonstrate a silicon nanocrystal Field Effect Transistor (ncFET). Its operation is similar to that of a Tunnelling Field Effect Transistor (TFET) with two barriers in series. The tunnelling barriers are fabricated in very…
We consider charge-qubit monitoring (continuous-in-time weak measurement) by a single-electron transistor (SET) operating in the sequential-tunneling regime. We show that commonly used master equations for this regime are not of the…
We have fabricated a custom cryogenic Complementary Metal-Oxide-Semiconductor (CMOS) integrated circuit that has a higher measurement bandwidth compared with conventional room temperature electronics. This allowed implementing single shot…
As a generic example of a voltage-driven superconducting structure we study a short superconductor connected to normal leads by means of low transparency tunnel junctions, with a voltage bias $V$ between the leads. The superconducting order…
Coherent tunneling processes of multiple Cooper pairs across a Josephson junction give rise to higher harmonics in the current phase relation. In this work, we propose and study Josephson junctions based on…
In this work, we review and expand recent theoretical proposals for the realization of electronic thermal diodes based on tunnel-junctions of normal metal and superconducting thin films. Starting from the basic rectifying properties of a…
We derive self-consistent expressions of current and noise for single-electron transistors driven by time-dependent perturbations. We take into account effects of the electrical environment, higher-order co-tunneling, and time-dependent…
Accurate measurement of transistor parasitic capacitance and its associated energy losses is critical for evaluating device performance, particularly in high-frequency and high-efficiency power conversion systems. This paper proposes a…
Conventional superconductor/insulator/superconductor (SIS) Josephson junctions, devices where two superconductors are separated by a tunnel barrier are technologically important as elements in quantum circuits, particularly with their key…
In this Letter, we present a theoretical analysis to single-electron pumping operation in a large range of driving frequencies through the time-dependent tunneling barriers controlled by external gate voltages. We show that the…
We investigate the behavior of quasiparticles in a hybrid electron turnstile with the aim of improving its performance as a metrological current source. The device is used to directly probe the density of quasiparticles and monitor their…
Using the Keldysh formalism the tunneling current through a hybrid structure where a confined magnetic insulator (I) is sandwiched between two non-magnetic leads is calculated. The leads can be either normal metals (M) or superconductors…
The time-dependent transport through single-molecule magnets coupled to magnetic or non-magnetic electrodes is studied in the framework of the generalized master equation method. We investigate the transient regime induced by the periodic…
Creating a transmon qubit using semiconductor-superconductor hybrid materials not only provides electrostatic control of the qubit frequency, it also allows parts of the circuit to be electrically connected and disconnected in situ by…